Albarkaty Kheir S, Kumi-Barimah Eric, Zhang Jian, Yang Zhiyong, Jose Gin
Department of Physics, Umm Al-Qura University, Makkah 24382, Saudi Arabia.
School of Chemical and Process Engineering, University of Leeds, Leeds LS2 9JT, UK.
Nanomaterials (Basel). 2022 Jun 10;12(12):2003. doi: 10.3390/nano12122003.
Germanium selenide (GeSe) thin films were fabricated by employing femtosecond pulsed-laser deposition (fs-PLD) on silicon (100) substrates at various substrate temperatures, ranging from 25 °C to 600 °C. The thin films' surface morphology qualities and optical properties were studied by utilising transmission electron microscopy (TEM) and X-ray diffraction (XRD). The X-ray diffraction result signifies that the thin films deposited on the silicon at a substrate temperature below 400 °C were amorphous Ge-Se. In contrast, those grown at 400 °C and above exhibited crystallised peaks of Ge-Se orthorhombic and tetragonal structures. The deposition growth rate of the thin films was also found to decrease substantially with increasing substrate temperature. These results show that the fs-PLD process has great potential for fabricating good quality Ge-Se thin film. This technique could enable the manufacture of modern optoelectronic devices for applications in optical communication, sensing, and ovonic threshold switching for the high-density crossbar memory array.
通过飞秒脉冲激光沉积（fs-PLD）在温度范围为25°C至600°C的各种衬底温度下的硅（100）衬底上制备了硒化锗（GeSe）薄膜。利用透射电子显微镜（TEM）和X射线衍射（XRD）研究了薄膜的表面形貌质量和光学性质。X射线衍射结果表明，在低于400°C的衬底温度下沉积在硅上的薄膜为非晶态Ge-Se。相比之下，在400°C及以上温度下生长的薄膜呈现出Ge-Se正交和四方结构的结晶峰。还发现薄膜的沉积生长速率随着衬底温度的升高而大幅降低。这些结果表明，fs-PLD工艺在制备高质量Ge-Se薄膜方面具有巨大潜力。该技术能够制造用于光通信、传感以及高密度交叉开关存储器阵列的电致阈值开关等应用的现代光电器件。
