Zhao Yingcheng, Li Zejun, Su Yueqi, Wu Changzheng, Xie Yi
Hefei National Laboratory for Physical Sciences at the Microscale, CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
ACS Nano. 2022 Jul 26;16(7):11152-11160. doi: 10.1021/acsnano.2c03978. Epub 2022 Jun 24.
Lowering thermal conductivity via introducing heterointerfaces of heterophase fillings (HPFs) is a common strategy for optimizing thermoelectric performance, but it is always accompanied by deterioration of electrical conductivity. Here we report an ordered magnetic HPF system in a CoSe-SnSe mosaic heterostructure superlattice synthesized by van der Waals confined epitaxial growth (vdWCEG), which realizes a maximized filling amount to decrease in-plane thermal conductivity of SnSe layers and maintain the intact in-plane carrier transport path. The in-plane thermal conductivity of CoSe-SnSe superlattice reaches the lowest range among SnSe-based materials with a value of 0.27 W m K at 850 K, which can be attributed to abundant interfaces between CoSe nanocrystals and SnSe layers. Moreover, the CoSe nanocrystals show superparamagnetic behavior, by which the rotation of magnetic domains provides additional phonon scattering to further decrease in-plane thermal conductivity. By combination with the preserved in-plane electrical conductivity of SnSe layers, an enhanced in-plane ZT value of 0.62 is achieved at 850 K. This vdWCEG approach can also be generally applied to fabricate various other two-dimensional (2D) mosaic heterostructures, providing an avenue for artificial 2D heterostructures with desired functionalities.
通过引入异相填充物(HPFs)的异质界面来降低热导率是优化热电性能的常用策略,但这总是伴随着电导率的下降。在此,我们报道了一种通过范德华限制外延生长(vdWCEG)合成的CoSe-SnSe镶嵌异质结构超晶格中的有序磁性HPF系统,该系统实现了最大填充量,以降低SnSe层的面内热导率并保持完整的面内载流子传输路径。CoSe-SnSe超晶格的面内热导率在基于SnSe的材料中达到最低范围,在850 K时为0.27 W m⁻¹ K⁻¹,这可归因于CoSe纳米晶体与SnSe层之间丰富的界面。此外,CoSe纳米晶体表现出超顺磁行为,通过磁畴的旋转提供额外的声子散射,进一步降低面内热导率。结合SnSe层保留的面内电导率,在850 K时实现了0.62的增强面内ZT值。这种vdWCEG方法也可普遍应用于制备各种其他二维(2D)镶嵌异质结构,为具有所需功能的人工2D异质结构提供了一条途径。