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基于范德华界面晶体管的具有偏置可调谐光谱的光源。

Light sources with bias tunable spectrum based on van der Waals interface transistors.

作者信息

Henck Hugo, Mauro Diego, Domaretskiy Daniil, Philippi Marc, Memaran Shahriar, Zheng Wenkai, Lu Zhengguang, Shcherbakov Dmitry, Lau Chun Ning, Smirnov Dmitry, Balicas Luis, Watanabe Kenji, Taniguchi Takashi, Fal'ko Vladimir I, Gutiérrez-Lezama Ignacio, Ubrig Nicolas, Morpurgo Alberto F

机构信息

Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.

Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.

出版信息

Nat Commun. 2022 Jul 7;13(1):3917. doi: 10.1038/s41467-022-31605-9.

DOI:10.1038/s41467-022-31605-9
PMID:35798736
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9263129/
Abstract

Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage -by suitably selecting the material forming the interfaces- and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods.

摘要

发光电子器件在当前技术的关键领域无处不在,如数据通信、固态照明、显示器和光互连。通过简单地改变器件偏置条件来电控制发射光的光谱,是一个具有潜在技术影响的重要目标。然而,找到一个能实现电致发光器件光谱广泛电调谐的材料平台仍然具有挑战性。在此,我们提出基于原子级薄半导体范德华界面的发光场效应晶体管,作为实现这一目标的一类有前景的器件。我们证明,室温电致发光中的大幅光谱变化既可以在器件组装阶段通过适当选择形成界面的材料来控制,也可以在芯片上通过改变偏置来修改器件工作点进行控制。尽管器件偏置与辐射跃迁动力学之间的确切关系仍有待了解,但我们的实验表明,负责发光的物理机制是稳健的,这使得这些器件能够与简单的大面积器件制造方法兼容。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec8f/9263129/ecc250e23fcf/41467_2022_31605_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec8f/9263129/a8ffd17ed36b/41467_2022_31605_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec8f/9263129/181330a62f78/41467_2022_31605_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec8f/9263129/5263ca6316eb/41467_2022_31605_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec8f/9263129/44ea54820991/41467_2022_31605_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec8f/9263129/aa6d511c26f3/41467_2022_31605_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec8f/9263129/ecc250e23fcf/41467_2022_31605_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec8f/9263129/a8ffd17ed36b/41467_2022_31605_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec8f/9263129/181330a62f78/41467_2022_31605_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec8f/9263129/5263ca6316eb/41467_2022_31605_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec8f/9263129/44ea54820991/41467_2022_31605_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec8f/9263129/aa6d511c26f3/41467_2022_31605_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec8f/9263129/ecc250e23fcf/41467_2022_31605_Fig6_HTML.jpg

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