Sedlovets Daria M, Naumov Anton P, Korotitsky Victor I, Starkov Vitaly V
Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Science (IMT RAS), 6 Academician Ossipyan Str., Moscow District, Chernogolovka 142432, Russia.
Nanomaterials (Basel). 2022 Jun 26;12(13):2191. doi: 10.3390/nano12132191.
This paper presents the results of studies of the nanoporous silicon structure, both with different pore depths (up to 180 μm) and with layers in which a graphene-like coating was synthesized on the inner surface of the pores. The nanoporous layers were characterized by SEM as well as IR and Raman spectroscopy. Cyclic voltammetry and galvanostatic charge-discharge data in 3 M HSO are presented as well as the results of the cyclic stability of these characteristics for the nanoporous structure. It was found that the degree of electrolyte pre-impregnation significantly affected the electrochemical processes, and the capacitance values depended on the depth (thickness) of the nanoporous layer. Increasing the thickness of the porous layer led to an increase in area-normalized pseudocapacity and was limited only by the mechanical strength of the structure. Performance improvement was also achieved by synthesis of the graphene-like layer in the volume of the nanoporous structure. The electrodes (composite materials) proposed in the work showed one of the best capacitive characteristics (87 mF/cm with 100% capacity retention after 15,000 cycles) in comparison with the data reported in the literature at present.
本文介绍了对纳米多孔硅结构的研究结果，该结构具有不同的孔深（可达180μm）以及在孔内表面合成了类石墨烯涂层的层。纳米多孔层通过扫描电子显微镜（SEM）以及红外和拉曼光谱进行表征。给出了在3M HSO中的循环伏安法和恒电流充放电数据，以及纳米多孔结构这些特性的循环稳定性结果。发现电解质预浸渍程度显著影响电化学过程，电容值取决于纳米多孔层的深度（厚度）。增加多孔层的厚度导致面积归一化赝电容增加，并且仅受结构的机械强度限制。通过在纳米多孔结构的体积中合成类石墨烯层也实现了性能提升。与目前文献报道的数据相比，该工作中提出的电极（复合材料）表现出最佳的电容特性之一（87mF/cm，在15000次循环后容量保持100%）。
