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用于垂直排列碳纳米管高效生长的导电界面:迈向纳米工程碳复合材料

Conducting Interface for Efficient Growth of Vertically Aligned Carbon Nanotubes: Towards Nano-Engineered Carbon Composite.

作者信息

Karakashov Blagoj, Mayne-L'Hermite Martine, Pinault Mathieu

机构信息

NIMBE, CEA, CNRS, Université Paris-Saclay, 91191 Gif-sur-Yvette, France.

出版信息

Nanomaterials (Basel). 2022 Jul 4;12(13):2300. doi: 10.3390/nano12132300.

DOI:10.3390/nano12132300
PMID:35808136
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9268312/
Abstract

Vertically aligned carbon nanotubes (VACNT) are manufactured nanomaterials with excellent properties and great potential for numerous applications. Recently, research has intensified toward achieving VACNT synthesis on different planar and non-planar substrates of various natures, mainly dependent on the user-defined application. Indeed, VACNT growth has to be adjusted and optimized according to the substrate nature and shape to reach the requirements for the application envisaged. To date, different substrates have been decorated with VACNT, involving the use of diffusion barrier layers (DBLs) that are often insulating, such as SiO or AlO. These commonly used DBLs limit the conducting and other vital physico-chemical properties of the final nanomaterial composite. One interesting route to improve the contact resistance of VACNT on a substrate surface and the deficient composite properties is the development of semi-/conducting interlayers. The present review summarizes different methods and techniques for the deposition of suitable conducting interfaces and controlled growth of VACNT on diverse flat and 3-D fibrous substrates. Apart from exhibiting a catalytic efficiency, the DBL can generate a conducting and adhesive interface involving performance enhancements in VACNT composites. The abilities of different conducting interlayers are compared for VACNT growth and subsequent composite properties. A conducting interface is also emphasized for the synthesis of VACNT on carbonaceous substrates in order to produce cost-effective and high-performance nano-engineered carbon composites.

摘要

垂直排列的碳纳米管(VACNT)是具有优异性能且在众多应用中具有巨大潜力的人造纳米材料。最近,针对在各种不同性质的平面和非平面衬底上实现VACNT合成的研究不断加强,这主要取决于用户定义的应用。实际上,VACNT的生长必须根据衬底的性质和形状进行调整和优化,以满足预期应用的要求。迄今为止,不同的衬底都已用VACNT进行修饰,这涉及使用通常为绝缘材料的扩散阻挡层(DBL),如SiO或AlO。这些常用的DBL限制了最终纳米材料复合材料的导电及其他重要的物理化学性质。改善VACNT在衬底表面的接触电阻和复合材料性能缺陷的一个有趣途径是开发半导电/导电中间层。本综述总结了在不同的平面和三维纤维衬底上沉积合适的导电界面以及控制VACNT生长的不同方法和技术。除了具有催化效率外,DBL还可以生成一个导电且具有粘附性的界面,从而提高VACNT复合材料的性能。比较了不同导电中间层对VACNT生长及后续复合材料性能的影响。还强调了在含碳衬底上合成VACNT时导电界面的作用,以便生产具有成本效益和高性能的纳米工程碳复合材料。

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