Ali Shazma, Usman Muhammad
Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa 23460 Pakistan.
Eur Phys J Plus. 2022;137(7):771. doi: 10.1140/epjp/s13360-022-03007-9. Epub 2022 Jul 5.
The internal quantum efficiency (IQE) of deep ultraviolet (DUV) AlGaN-based laser diode (LD) emitting, in the wavelength region between 260 and 279 nm, is improved by proposing a quaternary-layer AlGaInN between the p-doped electron blocking layer (EBL) and the p-doped waveguide. This leads to an increase in the carrier concentration in the active region of the proposed LD. The radiative recombination rate is improved by 74% in the proposed LD. The current density is reduced from 21 kA/cm (reference LD) to 6.13 kA/cm (proposed LD). The proposed LD has a 71% higher internal quantum efficiency than the reference LD. Using SiLENSe™ 6.3, we analyzed both structures numerically.
通过在p型掺杂电子阻挡层(EBL)和p型掺杂波导之间引入四元层AlGaInN,提高了发射波长在260至279nm之间的深紫外(DUV)AlGaN基激光二极管(LD)的内量子效率(IQE)。这导致了所提出的LD有源区中载流子浓度的增加。在所提出的LD中,辐射复合率提高了74%。电流密度从21 kA/cm(参考LD)降低到6.13 kA/cm(所提出的LD)。所提出的LD的内量子效率比参考LD高71%。我们使用SiLENSe™ 6.3对这两种结构进行了数值分析。