Lee Sunhyeong, Lee Jongwon, Lee Junyoung, Lee Jaeduk, Hwang Hyunsang
Center for Single Atom-based Semiconductor Device and Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea.
Flash PA, Memory Business, Samsung Electronics, Pyeongtaek, Gyeonggi, 17786, Republic of Korea.
Nanotechnology. 2022 Aug 5;33(43). doi: 10.1088/1361-6528/ac800c.
Grain boundary (GB) is a significant factor that deteriorates the transfer characteristics of poly-Si thin-film transistors (TFTs). In this study, we utilized the synergistic effect of microwave annealing (MWA) and high-pressure hydrogen annealing (HPHA) to effectively reduce grain boundary trap (GBT) density, resulting in improved field-effect mobility () and subthreshold swing (SS). To investigate the synergistic effect of MWA and HPHA, the transfer characteristics of rapid thermal annealing and forming gas annealing devices were compared and analyzed as control devices. Furthermore, the mechanism of SS and mobility enhancement can be quantitatively understood by lowering the GB barrier height. In addition, Raman spectroscopy proved that poly-Si crystallinity was improved during MWA. Our results showed that MWA and HPHA play a vital role in reducing GBT density and improving poly-Si TFT characteristics.
晶界（GB）是恶化多晶硅薄膜晶体管（TFT）传输特性的一个重要因素。在本研究中，我们利用微波退火（MWA）和高压氢气退火（HPHA）的协同效应，有效降低了晶界陷阱（GBT）密度，从而提高了场效应迁移率（）和亚阈值摆幅（SS）。为了研究MWA和HPHA的协同效应，将快速热退火和形成气退火器件的传输特性作为对照器件进行了比较和分析。此外，通过降低GB势垒高度，可以定量理解SS和迁移率增强的机制。此外，拉曼光谱证明在MWA过程中多晶硅结晶度得到了改善。我们的结果表明，MWA和HPHA在降低GBT密度和改善多晶硅TFT特性方面起着至关重要的作用。
