Lee In-Kyu, Lee Kwan Hyi, Lee Seok, Cho Won-Ju
Department of Electronic Materials Engineering, Kwangwoon University , 20 Gwangun-ro, Nowon-gu, Seoul 139-701, Republic of Korea.
ACS Appl Mater Interfaces. 2014 Dec 24;6(24):22680-6. doi: 10.1021/am506805a. Epub 2014 Dec 11.
We used a microwave annealing process to fabricate a highly reliable biosensor using amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs), which usually experience threshold voltage instability. Compared with furnace-annealed a-IGZO TFTs, the microwave-annealed devices showed superior threshold voltage stability and performance, including a high field-effect mobility of 9.51 cm(2)/V·s, a low threshold voltage of 0.99 V, a good subthreshold slope of 135 mV/dec, and an outstanding on/off current ratio of 1.18 × 10(8). In conclusion, by using the microwave-annealed a-IGZO TFT as the transducer in an extended-gate ion-sensitive field-effect transistor biosensor, we developed a high-performance biosensor with excellent sensing properties in terms of pH sensitivity, reliability, and chemical stability.
我们采用微波退火工艺，利用非晶铟镓锌氧化物（a-IGZO）薄膜晶体管（TFT）制造了一种高度可靠的生物传感器，这种晶体管通常会出现阈值电压不稳定的情况。与炉退火a-IGZO TFT相比，微波退火器件表现出卓越的阈值电压稳定性和性能，包括9.51 cm²/V·s的高场效应迁移率、0.99 V的低阈值电压、135 mV/dec的良好亚阈值斜率以及1.18×10⁸的出色开/关电流比。总之，通过将微波退火a-IGZO TFT用作扩展栅离子敏感场效应晶体管生物传感器中的换能器，我们开发出了一种在pH敏感性、可靠性和化学稳定性方面具有出色传感特性的高性能生物传感器。
