Mak Kin Fai, Shan Jie
Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA.
School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
Nat Nanotechnol. 2022 Jul;17(7):686-695. doi: 10.1038/s41565-022-01165-6. Epub 2022 Jul 14.
Moiré materials have emerged as a platform for exploring the physics of strong electronic correlations and non-trivial band topology. Here we review the recent progress in semiconductor moiré materials, with a particular focus on transition metal dichalcogenides. Following a brief overview of the general features in this class of materials, we discuss recent theoretical and experimental studies on Hubbard physics, Kane-Mele-Hubbard physics and equilibrium moiré excitons. We also comment on the future opportunities and challenges in the studies of transition metal dichalcogenide and other semiconductor moiré materials.
莫尔材料已成为探索强电子关联物理和非平凡能带拓扑的平台。在此，我们回顾半导体莫尔材料的最新进展，特别关注过渡金属二硫属化物。在简要概述这类材料的一般特征之后，我们讨论关于哈伯德物理、凯恩 - 梅勒 - 哈伯德物理和平衡莫尔激子的近期理论和实验研究。我们还对过渡金属二硫属化物及其他半导体莫尔材料研究中的未来机遇与挑战进行评论。
