Jian Yu, Feng Qi, Zhong Jinrui, Peng Huimin, Duan Junxi
Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, People's Republic of China.
Micronano Center, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, People's Republic of China.
J Phys Condens Matter. 2022 Aug 2;34(40). doi: 10.1088/1361-648X/ac825f.
Layered materials with exotic properties, such as superconducting, ferromagnetic, and so on, have attracted broad interest. The advances in van der Waals (vdW) stacking technology have enabled the fabrication of numerous types of junction structures. The dangling-bond-free interface provides an ideal platform to generate and probe various physics phenomena. Typical progress is the realization of vdW Josephson junctions with high supercurrent transparency constructed of two NbSelayers. Here we report the observation of periodic oscillations of the voltage drop across a NbSe/NbSevdW junctions under an in-plane magnetic field. The voltage-drop oscillations come from the interface and the magnitude of the oscillations has a non-monotonic temperature dependence which increases first with increasing temperature. These features make the oscillations different from the modulation of the critical current of a Josephson junction by the magnetic field and the Little-Parks effect. The oscillations are determined to be generated by the quantum interference effect between two superconducting junctions formed between the two NbSelayers. Our results thus provide a unique way to make an in-plane superconducting quantum interference device that can survive under a high magnetic field utilizing the Ising-paring nature of the NbSe.
具有超导、铁磁等奇异特性的层状材料引起了广泛关注。范德华(vdW)堆叠技术的进步使得能够制造出多种类型的结结构。无悬空键界面为产生和探测各种物理现象提供了理想平台。典型进展是实现了由两个NbSe层构成的具有高超导电流透明度的vdW约瑟夫森结。在此,我们报告了在面内磁场下观察到NbSe/NbSevdW结两端电压降的周期性振荡。电压降振荡源于界面,且振荡幅度具有非单调的温度依赖性,随温度升高先增大。这些特征使振荡不同于磁场对约瑟夫森结临界电流的调制以及利特 - 帕克斯效应。经确定,振荡是由两个NbSe层之间形成的两个超导结之间的量子干涉效应产生的。因此,我们的结果提供了一种独特方法,可利用NbSe的伊辛配对性质制造出能在高磁场下存活的面内超导量子干涉器件。