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垂直堆叠的 NbSe-石墨烯-NbSe 范德华结中的强近邻约瑟夫森耦合。

Strong Proximity Josephson Coupling in Vertically Stacked NbSe-Graphene-NbSe van der Waals Junctions.

机构信息

Department of Physics, Pohang University of Science and Technology , Pohang 37673, Republic of Korea.

出版信息

Nano Lett. 2017 Oct 11;17(10):6125-6130. doi: 10.1021/acs.nanolett.7b02707. Epub 2017 Sep 29.

Abstract

A layered two-dimensional superconducting material 2H-NbSe is used to build a van der Waals heterostructure, where a proximity-coupled superconducting order can be induced in the interfacing materials. Vertically stacked NbSe-graphene-NbSe is fabricated using van der Waals interlayer coupling, producing defect-free contacts with a high interfacial transparency. The atomically thin graphene layer allows the formation of a highly coherent proximity Josephson coupling between the two NbSe flakes. The temperature dependence of the junction critical current (I) reveals short and ballistic Josephson coupling characteristics that agree with theoretical prediction. The strong Josephson coupling is confirmed by a large junction critical current density of 1.6 × 10 A/cm, multiple Andreev reflections in the subgap structure of the differential conductance, and a magnetic-field modulation of I. This is the first demonstration of strongly proximity-coupled Josephson junctions with extremely clean interfaces in a dry-transfer-stacked van der Waals heterostructure.

摘要

使用二维超导材料 2H-NbSe 构建范德华异质结,可在界面材料中感应出近邻耦合超导序。通过范德华层间耦合制备了垂直堆叠的 NbSe-石墨烯-NbSe,产生了无缺陷的接触,具有高界面透明度。原子层薄的石墨烯层允许在两个 NbSe 薄片之间形成高度相干的近邻约瑟夫森耦合。结临界电流 (I) 的温度依赖性揭示了短程和弹道约瑟夫森耦合特性,与理论预测相符。大的结临界电流密度 1.6×10^6 A/cm、微分电导的亚隙结构中的多个安德烈夫反射以及 I 的磁场调制证实了强约瑟夫森耦合。这是在干燥转移堆叠的范德华异质结构中首次展示具有极其干净界面的强近邻耦合约瑟夫森结。

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