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通过锌特耳相前驱体的固态电化学氧化合成II型锗和锗硅合金包合物

Synthesis of Type II Ge and Ge-Si Alloyed Clathrates Using Solid-State Electrochemical Oxidation of Zintl Phase Precursors.

作者信息

Dopilka Andrew, Ovchinnikov Alexander, Childs Amanda, Bobev Svilen, Peng Xihong, Chan Candace K

机构信息

Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University, P.O. Box 876106, Tempe, Arizona 85827, United States.

Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, United States.

出版信息

Inorg Chem. 2022 Aug 8;61(31):12363-12372. doi: 10.1021/acs.inorgchem.2c01748. Epub 2022 Jul 25.

DOI:10.1021/acs.inorgchem.2c01748
PMID:35876805
Abstract

Germanium clathrates with the type II structure are open-framework materials that show promise for various applications, but the difficulty of achieving phase-pure products via traditional synthesis routes has hindered their development. Herein, we demonstrate the synthesis of type II Ge clathrates in a two-electrode electrochemical cell using NaGeSi ( = 0, 1) Zintl phase precursors as the working electrode, Na metal as the counter/reference electrode, and Na-ion conducting β″-alumina as the solid electrolyte. The galvanostatic oxidation of NaGe resulted in voltage plateaus around 0.34-0.40 V vs Na/Na with the formation of different products depending on the reaction temperature. When using NaGeSi as a precursor, nearly phase-pure, alloyed type II Ge-Si clathrate was obtained at 350 °C. The Na atoms in the large (Ge,Si) cages of the clathrate occupied off-centered positions according to Rietveld refinement and density functional theory calculations. The results indicate that electrochemical oxidation of Zintl phase precursors is a promising pathway for synthesizing Ge clathrates with type II structure and that Si alloying of the Zintl phase precursor can promote selective clathrate product formation over other phases.

摘要

具有II型结构的锗包合物是具有开放框架的材料,在各种应用中显示出前景,但通过传统合成路线获得纯相产物的困难阻碍了它们的发展。在此,我们展示了在双电极电化学电池中使用NaGeSi( = 0, 1)齐特耳相前驱体作为工作电极、Na金属作为对电极/参比电极以及Na离子传导β″-氧化铝作为固体电解质来合成II型锗包合物。NaGe的恒电流氧化导致相对于Na/Na在0.34 - 0.40 V左右出现电压平台,根据反应温度形成不同产物。当使用NaGeSi作为前驱体时,在350 °C下获得了近乎纯相的合金化II型Ge - Si包合物。根据Rietveld精修和密度泛函理论计算,包合物大(Ge,Si)笼中的Na原子占据偏心位置。结果表明,齐特耳相前驱体的电化学氧化是合成具有II型结构的锗包合物的一条有前景的途径,并且齐特耳相前驱体的Si合金化可以促进选择性形成包合物产物而非其他相。

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引用本文的文献

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Synthesis and Characterization of Type II Ge-Si Clathrate Films for Optoelectronic Applications.用于光电子应用的II型锗硅包合物薄膜的合成与表征
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