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外延生长的1T-TaTe₂中的一种新型超结构

A Novel × Superstructure in Epitaxially Grown 1T-TaTe.

作者信息

Hwang Jinwoong, Jin Yeongrok, Zhang Canxun, Zhu Tiancong, Kim Kyoo, Zhong Yong, Lee Ji-Eun, Shen Zongqi, Chen Yi, Ruan Wei, Ryu Hyejin, Hwang Choongyu, Lee Jaekwang, Crommie Michael F, Mo Sung-Kwan, Shen Zhi-Xun

机构信息

Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA.

Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.

出版信息

Adv Mater. 2022 Sep;34(38):e2204579. doi: 10.1002/adma.202204579. Epub 2022 Aug 20.

DOI:10.1002/adma.202204579
PMID:35902365
Abstract

The spontaneous formation of electronic orders is a crucial element for understanding complex quantum states and engineering heterostructures in 2D materials. A novel × charge order in few-layer-thick 1T-TaTe transition metal dichalcogenide films grown by molecular beam epitaxy, which has not been realized, is report. The photoemission and scanning probe measurements demonstrate that monolayer 1T-TaTe exhibits a variety of metastable charge density wave orders, including the × superstructure, which can be selectively stabilized by controlling the post-growth annealing temperature. Moreover, it is found that only the × order persists in 1T-TaTe films thicker than a monolayer, up to 8 layers. The findings identify the previously unrealized novel electronic order in a much-studied transition metal dichalcogenide and provide a viable route to control it within the epitaxial growth process.

摘要

电子序的自发形成是理解二维材料中复杂量子态和设计异质结构的关键要素。本文报道了一种通过分子束外延生长的几层厚的1T-TaTe过渡金属二硫属化物薄膜中尚未实现的新型×电荷序。光电子能谱和扫描探针测量表明,单层1T-TaTe呈现出多种亚稳电荷密度波序,包括×超结构,通过控制生长后退火温度可以选择性地使其稳定。此外,还发现只有×序在比单层厚的1T-TaTe薄膜(厚度达8层)中持续存在。这些发现确定了在一种经过大量研究的过渡金属二硫属化物中此前未实现的新型电子序,并提供了在外延生长过程中对其进行控制的可行途径。

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Controlling structure and interfacial interaction of monolayer TaSe on bilayer graphene.控制双层石墨烯上单层TaSe的结构和界面相互作用。
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