Chen Yingqi, Cheng Yufei, Zhao Junfeng, Zhang Wenwan, Gao Jianhua, Miao Hui, Hu Xiaoyun
School of Physics, Northwest University, Xi'an, Shaanxi 710127, PR China.
School of Physics, Northwest University, Xi'an, Shaanxi 710127, PR China.
J Colloid Interface Sci. 2022 Dec;627:1047-1060. doi: 10.1016/j.jcis.2022.07.117. Epub 2022 Jul 21.
Antimony sulfide (SbS) is a relatively abundant and environmentally friendly emerging photovoltaic material, which has been gradually applied in solar cells and photocatalysis. It has high light absorption capacity, but it suffers many deep-level defects and is prone to recombination of electron-hole pairs within itself. Here, by constructing the SbS/CdInS S-scheme heterojunction, we avoided the problem that electrons and holes cannot be separated and transported effectively due to many SbS defects (more recombination centers), and improved its application in the field of photoelectrochemical water splitting. Meanwhile, in order to further improve the performance of SbS/CdInS photoelectrode, we introduced CdS energy platform between SbS and CdInS to form a SbS/CdS/CdInS cascaded S-scheme heterojunction. Compared with SbS monomer, SbS/CdS/CdInS had higher absorbance intensity, IPCE value, ABPE value, and lower charge transfer resistance. In addition, the photocurrent density of the SbS/CdS/CdInS photoelectrode was about 4.20 mA/cm (1.23 V vs. RHE), which was 1.3 times higher than that of the SbS/CdInS photoelectrode (3.29 mA/cm) and 3.2 times higher than that of monomer SbS photoelectrode (1.32 mA/cm). This method offers new prospects for optimizing the performance of antimony chalcogenides photoelectrodes for photoelectrochemical water splitting.
硫化锑（SbS）是一种相对丰富且环境友好的新兴光伏材料，已逐渐应用于太阳能电池和光催化领域。它具有高吸光能力，但存在许多深层次缺陷，且自身容易发生电子 - 空穴对的复合。在此，通过构建SbS/CdInS S型异质结，我们避免了由于许多SbS缺陷（更多复合中心）导致电子和空穴无法有效分离和传输的问题，并改善了其在光电化学水分解领域的应用。同时，为了进一步提高SbS/CdInS光电极的性能，我们在SbS和CdInS之间引入CdS能量平台，形成SbS/CdS/CdInS级联S型异质结。与SbS单体相比，SbS/CdS/CdInS具有更高的吸光度强度、IPCE值、ABPE值以及更低的电荷转移电阻。此外，SbS/CdS/CdInS光电极的光电流密度约为4.20 mA/cm²（相对于可逆氢电极，1.23 V），比SbS/CdInS光电极（3.29 mA/cm²）高1.3倍，比单体SbS光电极（1.32 mA/cm²）高3.2倍。该方法为优化用于光电化学水分解的硫属锑化物光电极性能提供了新的前景。
