Albarakati Sultan, Xie Wen-Qiang, Tan Cheng, Zheng Guolin, Algarni Meri, Li Junbo, Partridge James, Spencer Michelle J S, Farrar Lawrence, Xiong Yimin, Tian Mingliang, Wang Xiaolin, Zhao Yu-Jun, Wang Lan
ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia.
Physics Department, Faculty of Science and Arts, University of Jeddah, P.O. Box 80200, 21589Khulais, Saudi Arabia.
Nano Lett. 2022 Aug 10;22(15):6166-6172. doi: 10.1021/acs.nanolett.2c01370. Epub 2022 Jul 31.
Manipulating the exchange bias (EB) effect using an electronic gate is a significant goal in spintronics. The emergence of van der Waals (vdW) magnetic heterostructures has provided improved means to study interlayer magnetic coupling, but to date, these heterostructures have not exhibited electrical gate-controlled EB effects. Here, we report electrically controllable EB effects in a vdW heterostructure, FePS-FeGeTe. By applying a solid protonic gate, the EB effects were repeatably electrically tuned. The EB field reaches up to 23% of the coercivity and the blocking temperature ranges from 30 to 60 K under various gate-voltages. The proton intercalations not only tune the average magnetic exchange coupling but also change the antiferromagnetic configurations in the FePS layer. These result in a dramatic modulation of the total interface exchange coupling and the resultant EB effects. The study is a significant step toward vdW heterostructure-based magnetic logic for future low-energy electronics.
利用电子门控操纵交换偏置（EB）效应是自旋电子学的一个重要目标。范德华（vdW）磁性异质结构的出现为研究层间磁耦合提供了更好的手段，但迄今为止，这些异质结构尚未表现出电门控EB效应。在此，我们报道了在vdW异质结构FePS - FeGeTe中实现的电可控EB效应。通过施加固体质子门控，EB效应可以反复进行电调谐。在不同的门电压下，EB场高达矫顽力的23%，阻塞温度范围为30至60 K。质子插层不仅调节了平均磁交换耦合，还改变了FePS层中的反铁磁构型。这些导致了总界面交换耦合和由此产生的EB效应的显著调制。该研究朝着基于vdW异质结构的未来低能耗电子学磁逻辑迈出了重要一步。
