Noor-A-Alam Mohammad, Nolan Michael
Tyndall National Institute, Lee Maltings, Dyke Parade, University College Cork, T12R5CP Cork, Ireland.
Nanoscale. 2022 Aug 18;14(32):11676-11683. doi: 10.1039/d2nr02761e.
Flexible two-dimensional (2D) piezoelectric materials are promising for applications in wearable electromechanical nano-devices such as sensors, energy harvesters, and actuators. A large piezo-response is required for any practical applications. Based on first-principles calculations, we report that ferroelectric TiOX and multiferroelectric VOX (X = F, Cl, and Br) monolayers exhibit large in-plane stress () and strain () piezoelectric coefficients. For example, the in-plane piezo-response of TiOBr (both = 28.793 × 10 C m and = 37.758 pm V) is about an order of magnitude larger than that of the widely studied 1H-MoS monolayer, and also quite comparable to the giant piezoelectricity of group-IV monochalcogenide monolayers, , SnS. Moreover, the of MOX monolayers - ranging from 29.028 pm V to 37.758 pm V - are significantly higher than the or of commonly used 3D piezoelectrics such as w-AlN ( = 5.1 pm V) and α-quartz ( = 2.3 pm V). Such a large of MOX monolayers originates from low in-plane elastic constants with large due to large Born effective charges () and atomic sensitivity to an applied strain. Moreover, we show the possibility of opening a new way of controlling piezoelectricity by applying a magnetic field.
柔性二维(2D)压电材料在可穿戴机电纳米器件(如传感器、能量收集器和致动器)的应用中具有广阔前景。任何实际应用都需要大的压电响应。基于第一性原理计算,我们报道铁电TiOX和多铁性VOX(X = F、Cl和Br)单层表现出大的面内应力()和应变()压电系数。例如,TiOBr的面内压电响应(= 28.793×10 C m和= 37.758 pm V)比广泛研究的1H-MoS单层大约一个数量级,并且与IV族单硫属化物单层、SnS的巨大压电性相当。此外,MOX单层的 - 范围从29.028 pm V到37.758 pm V - 显著高于常用3D压电材料如w-AlN(= 5.1 pm V)和α-石英(= 2.3 pm V)的或。MOX单层如此大的源于低的面内弹性常数,由于大的玻恩有效电荷()和对施加应变的原子敏感性而具有大的。此外,我们展示了通过施加磁场开辟一种控制压电性新方法的可能性。