Li Zujun, Luo Jiasheng, Zhou Yushan, Chen Jiawei, Ling Haojun, Zeng Jun, Yang Yujue, Dong Huafeng
School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, 510006, China.
School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510006, China.
Phys Chem Chem Phys. 2024 Apr 17;26(15):12133-12141. doi: 10.1039/d3cp05999e.
Highly efficient nano piezoelectric devices and nanomedical sensors are in great demand for high-performance piezoelectric materials. In this work, we propose new asymmetric XMoGeY (X = S, Se, Te; Y = N, P, As) monolayers with excellent piezoelectric properties, dynamic stability and flexible elastic properties. The piezoelectric coefficients () of XMoGeY monolayers range from 2.92 to 8.19 pm V. Among them, TeMoGeAs exhibits the highest piezoelectric coefficient ( = 8.19 pm V), which is 2.2 times higher than that of common 2D piezoelectric materials such as 2H-MoS ( = 3.73 pm V). Furthermore, all XMoGeY monolayers demonstrate flexible elastic properties ranging from 96.23 to 253.70 N m. Notably, TeMoGeAs has a Young's modulus of 96.23 N m, which is only one-third of that of graphene (336 N m). The significant piezoelectric coefficients of XMoGeY monolayers can be attributed to their asymmetric structures and flexible elastic properties. This study provides valuable insights into the potential applications of XMoGeY monolayers in nano piezoelectric devices and nanomedical sensors.
高效的纳米压电器件和纳米医学传感器对高性能压电材料有巨大需求。在这项工作中，我们提出了具有优异压电性能、动态稳定性和柔性弹性性能的新型不对称XMoGeY（X = S、Se、Te；Y = N、P、As）单层。XMoGeY单层的压电系数（）范围为2.92至8.19 pm V。其中，TeMoGeAs表现出最高的压电系数（ = 8.19 pm V），比常见的二维压电材料如2H-MoS（ = 3.73 pm V）高2.2倍。此外，所有XMoGeY单层都表现出96.23至253.70 N m的柔性弹性性能。值得注意的是，TeMoGeAs的杨氏模量为96.23 N m，仅为石墨烯（336 N m）的三分之一。XMoGeY单层显著的压电系数可归因于其不对称结构和柔性弹性性能。这项研究为XMoGeY单层在纳米压电器件和纳米医学传感器中的潜在应用提供了有价值的见解。
