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Janus 过渡金属二卤代物中的大面内和面外压电性。

Large In-Plane and Vertical Piezoelectricity in Janus Transition Metal Dichalchogenides.

机构信息

Department of Materials Science and Engineering, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States.

Department of Materials Science and Nanoengineering, Rice Unviersity , Houston, Texas 77005, United States.

出版信息

ACS Nano. 2017 Aug 22;11(8):8242-8248. doi: 10.1021/acsnano.7b03313. Epub 2017 Jul 17.

DOI:10.1021/acsnano.7b03313
PMID:28700210
Abstract

Piezoelectricity in 2D van der Waals materials has received considerable interest because of potential applications in nanoscale energy harvesting, sensors, and actuators. However, in all the systems studied to date, strain and electric polarization are confined to the basal plane, limiting the operation of piezoelectric devices. In this paper, based on ab initio calculations, we report a 2D materials system, namely, the recently synthesized Janus MXY (M = Mo or W, X/Y = S, Se, or Te) monolayer and multilayer structures, with large out-of-plane piezoelectric polarization. For MXY monolayers, both strong in-plane and much weaker out-of-plane piezoelectric polarizations can be induced by a uniaxial strain in the basal plane. For multilayer MXY, we obtain a very strong out-of-plane piezoelectric polarization when strained transverse to the basal plane, regardless of the stacking sequence. The out-of-plane piezoelectric coefficient d is found to be strongest in multilayer MoSTe (5.7-13.5 pm/V depending on the stacking sequence), which is larger than that of the commonly used 3D piezoelectric material AlN (d = 5.6 pm/V); d in other multilayer MXY structures are a bit smaller, but still comparable. Our study reveals the potential for utilizing piezoelectric 2D materials and their van der Waals multilayers in device applications.

摘要

二维范德华材料中的压电性因其在纳观能源收集、传感器和执行器等方面的潜在应用而受到广泛关注。然而,在迄今为止研究的所有系统中,应变和电极化都局限于基面,限制了压电器件的运作。在本文中,基于第一性原理计算,我们报告了一种二维材料体系,即最近合成的 Janus MXY(M = Mo 或 W,X/Y = S、Se 或 Te)单层和多层结构,具有大的面外压电极化。对于 MXY 单层,在基面内施加单轴应变可以诱导出强烈的面内和较弱的面外压电极化。对于多层 MXY,当横向应变时,我们获得了很强的面外压电极化,而与堆叠顺序无关。发现面外压电系数 d 在多层 MoSTe 中最强(取决于堆叠顺序,5.7-13.5 pm/V),大于常用的 3D 压电材料 AlN(d = 5.6 pm/V);其他多层 MXY 结构中的 d 略小,但仍可比较。我们的研究揭示了在器件应用中利用压电二维材料及其范德华多层的潜力。

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