Gou Runna, Ouyang Zhiyong, Xu Changsen, He Song, Cheng Shouduan, Shi Cencen, Zhao Jie, Xiao Yanhe, Lei Shuijin, Cheng Baochang
School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China.
Nanoscale Horiz. 2022 Aug 22;7(9):1095-1108. doi: 10.1039/d2nh00209d.
Although CHNHPbI can present an excellent photoresponse to visible light, its application in solar cells and photodetectors is seriously hindered due to hysteresis behaviour. Moreover, for its origin, there exist different opinions. Herein, we demonstrate a route to realize precise control for the electrical transport of a single CHNHPbI micro/nanowire by constructing a two-terminal device with asymmetric Ag and C electrodes, and its hysteresis can be clearly identified as a synergistic effect of the redox reaction at the interface of the Ag electrode and the injection and ejection of holes in the interfacial traps of the C electrode rather than its bulk effect. The device can show superior bias amplitude and illumination intensity dependence of hysteresis loops with typical bipolar resistive switching features. Thus, an excellent multilevel nonvolatile optical memory can be effectively realized by the modulation of the illumination and bias, and moreover a logic OR gate operation can be successfully implemented with voltage and illumination as input signals as well. This work clearly reveals and provides a new insight of hysteresis origin that can be attributed to a synergistic effect of two asymmetrical electrode interfaces, and therefore precisely controlling its electrical transport to realize an outstanding application potential in multifunctional devices integrated with optical nonvolatile memory and logic OR gate operation.
尽管CHNHPbI对可见光可呈现出优异的光响应，但其在太阳能电池和光电探测器中的应用却因滞后行为而受到严重阻碍。此外，对于其起源存在不同观点。在此，我们展示了一种通过构建具有不对称Ag和C电极的双端器件来实现对单个CHNHPbI微/纳米线电输运进行精确控制的途径，并且其滞后现象可明确被认定为Ag电极界面处氧化还原反应与C电极界面陷阱中空穴注入和逸出的协同效应，而非其体效应。该器件可展现出具有典型双极电阻开关特性的滞后回线对偏置幅度和光照强度的优异依赖性。因此，通过光照和偏置的调制能够有效实现出色的多级非易失性光学存储器，而且以电压和光照作为输入信号也能够成功实现逻辑或门操作。这项工作清晰地揭示并提供了关于滞后起源的新见解，即其可归因于两个不对称电极界面的协同效应，从而精确控制其电输运以在集成光学非易失性存储器和逻辑或门操作的多功能器件中实现卓越的应用潜力。
