Control of positive and negative photo- and thermal-responses in a single PbI@CHNHPbI micro/nanowire-based device for real-time sensing, nonvolatile memory, and logic operation.

CHNHPbI has shown great potential for photodetectors and photovoltaic devices due to its excellent positive response to visible light. However, its real-time response characteristics hinder its application in optical memory and logic operation; moreover, the presence of excessive PbI is a double-edged sword. Herein, we constructed a dual-terminal device using a single CHNHPbI micro/nanowire with two Ag electrodes, and then introduced PbI quantum dots (QDs) as hole trap centres by thermal decomposition at 160 °C. An anomalous negative photoconductivity (NPC) effect for sub-bandgap light below the PbI bandgap is obtained. Importantly, an electrically erasable nonvolatile photomemory can be realized. Furthermore, the device also exhibits an abnormal positive thermal resistance (PTR)-related thermomemory effect, and the thermal-induced high-resistance state (HRS) can be erased by a large bias or an illumination of 365 nm super-bandgap UV light. Additionally, logical "OR" gate operations are achieved through a combination of 650 nm sub-bandgap light and a 70 °C temperature-induced HRS, as well as a large bias and 365 nm super-bandgap light-triggered low-resistance state. These effects are attributed to the excitation and injection of holes in QDs and structural defect traps. This multifunctional device, integrating real-time sensing, nonvolatile memory, and logical operation, holds significant potential for novel electronic and optoelectronic applications.