Zhang Cong, Yin Xingtian, Guo Yuxiao, Xie Haixia, Liu Dan, Que Wenxiu
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Shaanxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, P. R. China.
Phys Chem Chem Phys. 2022 Aug 10;24(31):18896-18904. doi: 10.1039/d2cp02201j.
Due to their low cost, tunable band gap and excellent thermostability, all-inorganic halide perovskites CsPbX (X = Br, I) have become a kind of promising photovoltaic material. However, compared to the organic-inorganic hybrid perovskite solar cells, the performance of CsPbX solar cells still needs to be improved. In this work, for the first time, we applied the sol-gel derived amorphous InGaZnO film as electron transport layers (ETLs) in CsPbX-based devices. In these devices, the carbon electrode deposited by screen printing replaced the unstable hole transport layer and the expensive metal electrode to obtain hole transport free carbon-based devices, which significantly simplifies the preparation process and reduces the production cost. With the application of amorphous InGaZnO films, devices show a relatively high power conversion efficiency (9.07%) and excellent thermal stability. Compared with the reported CsPbX devices using SnO or TiO ETLs, the performance of amorphous InGaZnO based devices has been significantly improved. This work provides a promising route to prepare highly thermally stable all-inorganic perovskite solar cells using a-IGZO films.
由于其低成本、可调节的带隙和出色的热稳定性，全无机卤化物钙钛矿CsPbX（X = Br，I）已成为一种很有前景的光伏材料。然而，与有机-无机杂化钙钛矿太阳能电池相比，CsPbX太阳能电池的性能仍有待提高。在这项工作中，我们首次将溶胶-凝胶法制备的非晶InGaZnO薄膜用作基于CsPbX的器件中的电子传输层（ETL）。在这些器件中，通过丝网印刷沉积的碳电极取代了不稳定的空穴传输层和昂贵的金属电极，从而获得了无空穴传输的碳基器件，这显著简化了制备过程并降低了生产成本。随着非晶InGaZnO薄膜的应用，器件表现出相对较高的功率转换效率（9.07%）和出色的热稳定性。与报道的使用SnO或TiO ETL的CsPbX器件相比，基于非晶InGaZnO的器件性能有了显著提高。这项工作为使用a-IGZO薄膜制备高热稳定性的全无机钙钛矿太阳能电池提供了一条很有前景的途径。
