Ha Youngkyoung, Byun Jinho, Lee Jaekwang, Son Jaeseok, Kim Younghak, Lee Shinbuhm
Department of Physics and Chemistry, Department of Emerging Materials Science, DGIST, Daegu 42988, Republic of Korea.
Department of Physics, Pusan National University, Busan 46241, Republic of Korea.
Nano Lett. 2022 Aug 24;22(16):6573-6579. doi: 10.1021/acs.nanolett.2c01487. Epub 2022 Aug 8.
Despite being a requisite for modern transparent electronics, few metals have a sufficiently high infrared transmittance due to the free electron response. Here, upon alloying the correlated metal SrVO with BaVO, the medium wavelength infrared transmittance at a wavelength of 4 μm is found to be 50% higher than those for Sn-doped InO (ITO) and La-doped BaSnO (BLSO). The room temperature resistivity of the alloy of ∼100 μΩ cm is 1 order of magnitude lower than those of ITO and BLSO, guaranteeing a profound electromagnetic shielding effectiveness of 22-31 dB at 10 GHz in the X-band. Systematic investigations reveal symmetry breaking of VO oxygen octahedra in SrVO due to the substitution of Sr with larger Ba ions, localization of electrons in the lower energy V- and orbitals, and stronger correlation effects. The lattice-orbital-charge-coupled engineering of the electronic band structure in correlated metals offers a new design strategy to create super-broad-band transparent conductors with an enhanced shielding capability.
尽管是现代透明电子器件的必备材料，但由于自由电子响应，很少有金属具有足够高的红外透射率。在此，将关联金属SrVO与BaVO合金化后，发现其在4μm波长处的中波长红外透射率比掺锡氧化铟（ITO）和掺镧锡酸钡（BLSO）高50%。该合金的室温电阻率约为100μΩ·cm，比ITO和BLSO低1个数量级，保证了在X波段10GHz时具有22 - 31dB的强电磁屏蔽效能。系统研究表明，由于用较大的Ba离子取代Sr，SrVO中VO氧八面体的对称性被打破，电子在较低能量的V - 和 轨道中局域化，且关联效应更强。关联金属中电子能带结构的晶格 - 轨道 - 电荷耦合工程为制造具有增强屏蔽能力的超宽带透明导体提供了一种新的设计策略。
