Jeon Jingyeong, Ha Youngkyoung, MacManus-Driscoll Judith L, Lee Shinbuhm
Department of Physics and Chemistry, Department of Emerging Materials Science, DGIST, Daegu, 42988, Republic of Korea.
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK.
Nano Converg. 2023 Oct 28;10(1):50. doi: 10.1186/s40580-023-00397-z.
In this work, we find that La-doped BaSnO (BLSO) is shown to be a promising electromagnetic shielding transparent conductor. While films grown on industrially practical optoelectronic MgAlO substrates have higher sheet resistance by three orders of magnitude than in previous reports, we show how to recover the sheet resistance close to the single-crystal level by use of an MgO template layer which enables high quality (001)-oriented BLSO epitaxial film growth on (001) MgAlO. There is a positive correlation between crystallinity and conductivity; high crystallinity minimizes scattering of free electrons. By applying this design principle to 5-20% doped films, we find that highly crystalline 5% La-doped BLSO films exhibit low sheet resistance of ~ 8.7 Ω ▯ , high visible transmittance of ~ 80%, and high X-band electromagnetic shielding effectiveness of ~ 25.9 dB, thus outperforming transparent conducting oxides films of Sn-doped InO and SrMoO.
在这项工作中，我们发现镧掺杂的锡酸钡（BLSO）是一种很有前景的电磁屏蔽透明导体。虽然在工业上实用的光电MgAlO衬底上生长的薄膜的薄层电阻比以前的报告高三个数量级，但我们展示了如何通过使用MgO模板层将薄层电阻恢复到接近单晶水平，该模板层能够在（001）MgAlO上实现高质量的（001）取向BLSO外延膜生长。结晶度和电导率之间存在正相关；高结晶度可使自由电子的散射最小化。通过将这种设计原理应用于5%-20%掺杂的薄膜，我们发现高度结晶的5%镧掺杂BLSO薄膜表现出约8.7Ω/sq的低薄层电阻、约80%的高可见光透射率和约25.9dB的高X波段电磁屏蔽效能，从而优于掺锡氧化铟和钼酸锶的透明导电氧化物薄膜。
