Wang Yu, Gao Qian, Li Wenhui, Cheng Peng, Zhang Yi-Qi, Feng Baojie, Hu Zhenpeng, Wu Kehui, Chen Lan
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China.
ACS Nano. 2022 Aug 23;16(8):13014-13021. doi: 10.1021/acsnano.2c05556. Epub 2022 Aug 9.
A theoretical ideal two-dimensional electron gas (2DEG) was characterized by a flat density of states independent of energy. Compared with conventional two-dimensional free-electron systems in semiconductor heterojunctions and noble metal surfaces, we report here the achievement of ideal 2DEG with multiple quantized states in few-layer InSe films. The multiple quantum well states (QWSs) in few-layer InSe films are found, and the number of QWSs is strictly equal to the number of atomic layers. The multiple stair-like DOS as well as multiple bands with parabolic dispersion both characterize ideal 2DEG features in these QWSs. Density functional theory calculations and numerical simulations based on quasi-bounded square potential wells described as the Kronig-Penney model provide a consistent explanation of 2DEG in the QWSs. Our work demonstrates that 2D van der Waals materials are ideal systems for realizing 2DEG hosted by multiple quantized Kronig-Penney states, and the semiconducting nature of the material provides a better chance for construction of high-performance electronic devices utilizing these states, for example, superlattice devices with negative differential resistance.
理论上的理想二维电子气(2DEG)的特征是具有与能量无关的平坦态密度。与半导体异质结和贵金属表面的传统二维自由电子系统相比,我们在此报告了在少层InSe薄膜中实现具有多个量子化态的理想2DEG。发现了少层InSe薄膜中的多个量子阱态(QWSs),并且QWSs的数量严格等于原子层数。多个阶梯状态密度以及具有抛物线色散的多个能带都表征了这些QWSs中的理想2DEG特征。基于描述为克勒尼希-彭尼模型的准束缚方势阱的密度泛函理论计算和数值模拟为QWSs中的2DEG提供了一致的解释。我们的工作表明,二维范德华材料是实现由多个量子化克勒尼希-彭尼态承载的2DEG的理想系统,并且材料的半导体性质为利用这些态构建高性能电子器件提供了更好的机会,例如具有负微分电阻的超晶格器件。