School of Physics , University of Manchester , Oxford Road , Manchester , M13 9PL , U.K.
National Graphene Institute , University of Manchester , Oxford Road , Manchester , M13 9PL , U.K.
Nano Lett. 2018 Jun 13;18(6):3950-3955. doi: 10.1021/acs.nanolett.8b01376. Epub 2018 May 21.
Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.
硒化铟，一种后过渡金属的硫族化物，是一种具有有趣电子性质的新型二维（2D）半导体。其可调带隙和高电子迁移率已经引起了相当多的研究兴趣。在这里，我们利用静电门控展示了由 InSe 少层晶体制成的器件中单电子的强量子限制和操纵。我们报告了在库仑阻塞区的栅控量子点以及在点接触中的一维量子化，揭示了多个平台。这项工作是基于 2D 材料开发高质量器件的重要里程碑，并使 InSe 成为相关电子和光电子应用的首选候选材料。
