Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, United States.
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States.
ACS Macro Lett. 2022 Sep 20;11(9):1049-1054. doi: 10.1021/acsmacrolett.2c00395. Epub 2022 Aug 10.
Conventional chemically amplified resists (CARs) rely on the usage of photoacid generators to serve as the source of chemical amplification. However, acid diffusion inevitably accompanies CARs and has led to the resolution, line edge roughness, and sensitivity (RLS) trade-off, which is the most challenging technical problem for modern photoresists. Herein, we take advantage of the self-immolative property of polyphthalaldehyde (PPA) derivatives to create end-cap enabled chain scissionable resists for extreme ultraviolet (EUV) lithography. The feasibility of this strategy was demonstrated under UV photodegradation experiments. The dose-to-clear (DTC) under EUV radiation was 90 mJ/cm for the most promising resist, representing more than a 100-fold improvement over previous PPA resists. Density functional theory (DFT) calculations were conducted to understand the structural origin of end-cap EUV sensitivity.
传统的化学增幅抗蚀剂（CARs）依赖于光酸产生剂的使用作为化学增幅的来源。然而，酸的扩散不可避免地伴随着 CARs，并导致分辨率、线边缘粗糙度和灵敏度（RLS）之间的权衡，这是现代抗蚀剂最具挑战性的技术问题。在这里，我们利用聚邻苯二甲醛（PPA）衍生物的自毁性质，为极紫外（EUV）光刻制造端基封端的可链断裂抗蚀剂。该策略的可行性在 UV 光降解实验中得到了验证。最有前途的抗蚀剂在 EUV 辐射下的清胶剂量（DTC）为 90mJ/cm，比以前的 PPA 抗蚀剂提高了 100 多倍。进行了密度泛函理论（DFT）计算，以了解端基 EUV 灵敏度的结构起源。
