Chakalov Edem R, Tupikina Elena Yu, Ivanov Daniil M, Bartashevich Ekaterina V, Tolstoy Peter M
Institute of Chemistry, St. Petersburg State University, 198504 St. Petersburg, Russia.
Chemistry Department, South Ural State University, 454080 Chelyabinsk, Russia.
Molecules. 2022 Jul 28;27(15):4848. doi: 10.3390/molecules27154848.
In this study, we present results of a detailed topological analysis of electron density (ED) of 145 halogen-bonded complexes formed by various fluorine-, chlorine-, bromine-, and iodine-containing compounds with trimethylphosphine oxide, MePO. To characterize the halogen bond (XB) strength, we used the complexation enthalpy, the interatomic distance between oxygen and halogen, as well as the typical set of electron density properties at the bond critical points calculated at B3LYP/jorge-ATZP level of theory. We show for the first time that it is possible to predict the XB strength based on the distance between the minima of ED and molecular electrostatic potential (ESP) along the XB path. The gap between ED and ESP minima exponentially depends on local electronic kinetic energy density at the bond critical point and tends to be a common limiting value for the strongest halogen bond.
在本研究中,我们展示了对由各种含氟、氯、溴和碘的化合物与三甲基氧化膦(MePO)形成的145个卤键复合物的电子密度(ED)进行详细拓扑分析的结果。为了表征卤键(XB)强度,我们使用了络合焓、氧与卤素之间的原子间距离,以及在B3LYP/jorge - ATZP理论水平下计算得到的键临界点处的一组典型电子密度性质。我们首次表明,可以基于沿XB路径的ED最小值与分子静电势(ESP)之间的距离来预测XB强度。ED和ESP最小值之间的差距指数依赖于键临界点处的局部电子动能密度,并且对于最强的卤键往往趋于一个共同的极限值。