Chen Zhenyu, Liang Feng, Zhao Degang, Yang Jing, Chen Ping, Jiang Desheng
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China.
Nanomaterials (Basel). 2022 Jul 27;12(15):2581. doi: 10.3390/nano12152581.
Potential barriers between the waveguide layer and MQW active region may influence injection efficiency significantly, which is important in improving output characteristics of GaN-based green laser diodes (LDs). In this study, potential barriers and injection efficiency of LDs are investigated by simulation methods. It is found that different indium content in quantum barrier layers results in different potential barrier heights, leading to different recombination rates in upper and lower waveguide layers, and the injection efficiency can be modulated effectively. An eclectic choice of indium content can suppress recombination in two waveguide layers, improving the output characteristics of green LDs. Additionally, a composite lower waveguide layer structure is proposed to reduce the negative effect of potential barriers. High output power and low threshold current are achieved owing to the reduction in electron injection blockage and hole leakage effects.
波导层与多量子阱有源区之间的潜在势垒可能会显著影响注入效率，这对于改善基于氮化镓的绿色激光二极管（LD）的输出特性至关重要。在本研究中，通过模拟方法研究了LD的潜在势垒和注入效率。研究发现，量子势垒层中不同的铟含量会导致不同的势垒高度，从而导致上下波导层中不同的复合率，并且注入效率可以得到有效调制。铟含量的折衷选择可以抑制两个波导层中的复合，从而改善绿色LD的输出特性。此外，还提出了一种复合下波导层结构以降低势垒的负面影响。由于电子注入阻挡和空穴泄漏效应的降低，实现了高输出功率和低阈值电流。
