Mirzayev Matlab N, Donkov Alexander A, Popov Evgeni A, Demir Ertugrul, Jabarov Sakin H, Chkhartishvili Levan S, Adeojo Samuel A, Doroshkevich Aleksandr S, Sidorin Alexey A, Asadov Asif G, Thabethe Thabsile T, Khandaker Mayeen U, Alamri Sultan, Osman Hamid, Trukhanov Alex V, Trukhanov Sergei V
Institute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku AZ-1143, Azerbaijan.
Scientific-Research Institute Geotecnological Problems of Oil, Gas and Chemistry, Azerbaijan State Oil and Industry University, Baku AZ-1010, Azerbaijan.
Nanomaterials (Basel). 2022 Jul 31;12(15):2644. doi: 10.3390/nano12152644.
In the presented work, BC was irradiated with xenon swift heavy ions at the energy of 167 MeV. The irradiation of the substrate was done at room temperature to a fluence of 3.83 × 10 ion/cm. The samples were then analyzed with the X-ray diffraction technique to study the structural modification, as it can probe the region of penetration of xenon atoms due to the low atomic number of the two elements involved in the material under study. The nano-cluster formation under ion irradiation was observed. Positron lifetime (PLT) calculations of the secondary point defects forming nanoclusters and introduced into the BC substrate by hydrogen and helium implantation were also carried out with the Multigrid instead of the K-spAce (MIKA) simulation package. The X-ray diffraction results confirmed that the sample was BC and it had a rhombohedral crystal structure. The X-ray diffraction indicated an increase in the lattice parameter due to the Swift heavy ion (SHI) irradiation. In B-CCC, the difference between τ with the saturation of H or He in the defect is nearly 20 ps. Under the same conditions with BC-CBC, there is approximately twice the value for the same deviation.
在本研究工作中,以167 MeV的能量用氙快重离子辐照BC。在室温下对衬底进行辐照,注量为3.83×10离子/cm。然后用X射线衍射技术对样品进行分析,以研究结构改性,因为由于所研究材料中涉及的两种元素原子序数低,它可以探测氙原子的穿透区域。观察到离子辐照下纳米团簇的形成。还使用多网格而非K空间(MIKA)模拟软件包对通过氢和氦注入引入BC衬底并形成纳米团簇的二次点缺陷进行了正电子寿命(PLT)计算。X射线衍射结果证实样品为BC,且具有菱面体晶体结构。X射线衍射表明由于快重离子(SHI)辐照,晶格参数增加。在B-CCC中,缺陷中H或He饱和时τ的差异接近20 ps。在与BC-CBC相同的条件下,相同偏差的值约为其两倍。