High-Performance Resistive Random Access Memories Based on Two-Dimensional HAPbI Organic-Inorganic Hybrid Perovskite.

Organic-inorganic hybrid perovskites have attracted extensive attention for potential memory applications because of their excellent properties, such as high charge carrier mobility and fast ion migration. Herein, the two-dimensional HAPbI perovskite with an octahedral structure and high stability was prepared by a facile solution method. Moreover, the resistive random access memory (RRAM) with the Ag/PMMA/HAPbI/ITO structure has been successfully fabricated by spin coating and vacuum thermal evaporation. The as-prepared RRAM device based on HAPbI demonstrated superior resistive switching performance. The on/off ratio is as high as 10, and the corresponding retention of the device exceeds 10 000 s; furthermore, the RRAM device could be kept stable after being kept in the air for 24 weeks.