Liu Yu, Susilo Resta A, Lee Yongbin, Abeykoon A M Milinda, Tong Xiao, Hu Zhixiang, Stavitski Eli, Attenkofer Klaus, Ke Liqin, Chen Bin, Petrovic Cedomir
Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States.
Center for High Pressure Science and Technology Advanced Research, Pudong, Shanghai 201203, China.
ACS Nano. 2022 Aug 23;16(8):13134-13143. doi: 10.1021/acsnano.2c06080. Epub 2022 Aug 12.
Two-dimensional magnetic materials (2DMMs) are significant not only for studies on the nature of 2D long-range magnetic order but also for future spintronic devices. Of particular interest are 2DMMs where spins can be manipulated by electrical conduction. Whereas CrSiTe exhibits magnetic order in few-layer crystals, its large band gap inhibits electronic conduction. Here we show that the defect-induced short-range crystal order in CrSiTe, on the length scale below 0.6 nm, induces a substantially reduced band gap and robust semiconducting behavior down to 2 K that turns to metallic above 10 GPa. Our results will be helpful in designing conducting states in 2DMMs and call for spin-resolved measurement of the electronic structure in exfoliated ultrathin crystals.
二维磁性材料(2DMMs)不仅对于二维长程磁序本质的研究具有重要意义,而且对于未来的自旋电子器件也很重要。特别令人感兴趣的是那些自旋可通过导电进行操控的二维磁性材料。虽然CrSiTe在少层晶体中表现出磁序,但其较大的带隙抑制了电子传导。在此我们表明,CrSiTe中在长度尺度低于0.6纳米时由缺陷诱导的短程晶体序,会导致带隙大幅减小,并在低至2 K时呈现出稳健的半导体行为,而在高于10 GPa时转变为金属态。我们的结果将有助于设计二维磁性材料中的导电态,并呼吁对剥离的超薄晶体中的电子结构进行自旋分辨测量。