Petit Antoine, Pokam Sylvia, Mazen Frederic, Tardif Samuel, Landru Didier, Kononchuk Oleg, Ben Mohamed Nadia, Olbinado Margie P, Rack Alexander, Rieutord Francois
Univ. Grenoble Alpes, CEA, LETI, MINATEC Campus, F-38054 Grenoble, France.
Univ. Grenoble Alpes, CEA, IRIG-MEM-NRS, F-38000 Grenoble, France.
J Appl Crystallogr. 2022 Jul 30;55(Pt 4):911-918. doi: 10.1107/S1600576722006537. eCollection 2022 Aug 1.
investigations of cracks propagating at up to 2.5 km s along an (001) plane of a silicon single crystal are reported, using X-ray diffraction megahertz imaging with intense and time-structured synchrotron radiation. The studied system is based on the Smart Cut process, where a buried layer in a material (typically Si) is weakened by microcracks and then used to drive a macroscopic crack (10 m) in a plane parallel to the surface with minimal deviation (10 m). A direct confirmation that the shape of the crack front is not affected by the distribution of the microcracks is provided. Instantaneous crack velocities over the centimetre-wide field of view were measured and showed an effect of local heating by the X-ray beam. The post-crack movements of the separated wafer parts could also be observed and explained using pneumatics and elasticity. A comprehensive view of controlled fracture propagation in a crystalline material is provided, paving the way for the measurement of ultra-fast strain field propagation.
报告了利用具有高强度和时间结构的同步加速器辐射的X射线衍射兆赫兹成像技术,对沿硅单晶(001)平面以高达2.5 km s的速度扩展的裂纹进行的研究。所研究的系统基于智能剥离工艺,其中材料(通常为硅)中的埋层通过微裂纹被削弱,然后用于在与表面平行的平面内驱动宏观裂纹(10 m),偏差最小(10 m)。直接证实了裂纹前沿的形状不受微裂纹分布的影响。测量了厘米级视场范围内的瞬时裂纹速度,并显示了X射线束的局部加热效应。还可以使用气体力学和弹性理论观察并解释分离的晶圆部分在裂纹后的运动。提供了对晶体材料中受控断裂扩展的全面视图,为超快应变场传播的测量铺平了道路。