Yamanaka Toshiki, Hayashi Yamato, Takizawa Hirotsugu
Graduate School of Engineering, Department of Applied Chemistry, Tohoku University, 6-6 Aoba, Aramaki, Aobaku, Sendai 980-8579, Japan.
Graduate School of Engineering, Department of Applied Chemistry, Tohoku University, 6-6 Aoba, Aramaki, Aobaku, Sendai 980-8579, Japan.
Ultrason Sonochem. 2022 Sep;89:106114. doi: 10.1016/j.ultsonch.2022.106114. Epub 2022 Aug 9.
In this study, we investigated the fabrication of supersaturated gallium (Ga)-aluminum (Al) liquid alloy and Al-doped γ-GaO nanoparticles (NPs) at near room temperature (60 °C) using sonochemical and sonophysical effects. Supersaturated Ga-Al liquid alloy microparticles (D = 1.72 µm) were formed and stabilized at 60 °C by the thermal nonequilibrium field provided by sonochemical hot spots. Compared with liquid Ga, supersaturated Ga-Al liquid alloy was rapidly oxidized to a uniform oxide without AlO or Al deposition. Thus, ultrafine Al-doped γ-GaO NPs were obtained after only 1 h of ultrasonic irradiation at 60 °C. The oxidation of liquid Ga was remarkably accelerated by alloying with metallic Al and ultrasonic irradiation, and the time was shortened. The average diameter and surface area of the γ-GaO-based NPs were 59 nm and 181 m/g, respectively. Compared with γ-GaO, the optical bandgap of the Al-doped γ-GaO NPs was broadened, and the thermal stability improved, indicating Al-doping into the γ-GaO lattice. However, the lattice constant of γ-GaO was almost unchanged with or without Al-doping. Al was introduced into the defect sites of Ga, which were massively induced in the defective spinel structure during ultrasonic processing. Therefore, sonochemical processing, which provides nonequilibrium reaction fields, is suitable for the synthesis of supersaturated and metastable materials in metals and ceramics fields.
在本研究中,我们利用声化学和声物理效应,研究了在近室温(60°C)下制备过饱和镓(Ga)-铝(Al)液态合金和铝掺杂γ-GaO纳米颗粒(NPs)的方法。通过声化学热点提供的热非平衡场,过饱和Ga-Al液态合金微粒(D = 1.72 µm)在60°C下形成并稳定下来。与液态Ga相比,过饱和Ga-Al液态合金迅速氧化成均匀的氧化物,没有AlO或Al沉积。因此,在60°C下仅超声辐照1小时后,就获得了超细铝掺杂γ-GaO NPs。与金属Al合金化和超声辐照显著加速了液态Ga的氧化,且时间缩短。基于γ-GaO的NPs的平均直径和表面积分别为59 nm和181 m²/g。与γ-GaO相比,铝掺杂γ-GaO NPs的光学带隙变宽,热稳定性提高,表明Al掺杂到了γ-GaO晶格中。然而,γ-GaO的晶格常数在有或没有Al掺杂时几乎不变。Al被引入到Ga的缺陷位点,这些缺陷位点在超声处理过程中在缺陷尖晶石结构中大量产生。因此,提供非平衡反应场的声化学处理适用于金属和陶瓷领域中超饱和和亚稳材料的合成。