Alhalaili Badriyah, Vidu Ruxandra, Mao Howard, Islam M Saif
Nanotechnology and Advanced Materials Program, Kuwait Institute for Scientific Research, Safat 13109, Kuwait.
Electrical and Computer Engineering, University of California at Davis, Davis, CA 95616, USA.
Nanomaterials (Basel). 2020 Sep 25;10(10):1920. doi: 10.3390/nano10101920.
Gallium oxide (GaO) is a new wide bandgap semiconductor with remarkable properties that offers strong potential for applications in power electronics, optoelectronics, and devices for extreme conditions. In this work, we explore the morphology of GaO nanostructures on different substrates and temperatures. We used silver catalysts to enhance the growth of GaO nanowires on substrates such as p-Si substrate doped with boron, 250 nm SiO on n-Si, 250 nm SiN on p-Si, quartz, and n-Si substrates by using a thermal oxidation technique at high temperatures (~1000 °C) in the presence of liquid silver paste that served as a catalyst layer. We present the results of the morphological, structural, and elemental characterization of the GaO nanostructures. This work offers in-depth explanation of the dense, thin, and long GaO nanowire growth directly on the surfaces of various types of substrates using silver catalysts.
氧化镓（GaO）是一种新型宽带隙半导体，具有卓越的性能，在功率电子学、光电子学以及极端条件下使用的器件方面具有强大的应用潜力。在这项工作中，我们探索了不同衬底和温度下GaO纳米结构的形态。我们使用银催化剂，通过在高温（约1000°C）下的热氧化技术，在掺硼的p-Si衬底、n-Si上的250 nm SiO、p-Si上的250 nm SiN、石英和n-Si衬底等衬底上，利用作为催化剂层的液态银浆来增强GaO纳米线的生长。我们展示了GaO纳米结构的形态、结构和元素表征结果。这项工作深入解释了使用银催化剂直接在各种类型衬底表面生长致密、纤细且长的GaO纳米线的情况。
