Yang Ni, Xu Shaofan, Xu Chengying
Department of Mechanical and Aerospace Engineering, NC State University, Raleigh, NC, 27607, USA.
Sci Rep. 2022 Aug 23;12(1):14374. doi: 10.1038/s41598-022-18563-4.
With the rapid development of electromagnetic (EM) wave circuit devices, high-performance wave-transparent materials with various functions have attracted great attention. Ceramic material is a promising candidate to be applied in harsh environments because of its chemical and corrosion resistance. In this work, a polymer-derived route was adopted to synthesize ceramic composite at room temperature. The composite is made of perhydropolysilazane-derived SiON ceramic and reinforced with boron nitride nanotubes (BNNTs) sheets. With the addition of SiON ceramic materials, the resultant sample showed an excellent hydrophobicity with a contact angle of 135-146.9°. More importantly, superior thermal stability at 1600 °C in the oxygen-containing atmosphere was observed for the fabricated SiON/BNNTs sample, without any shape change. The electromagnetic transparency of the SiON/BNNTs was studied through the waveguide method. The prepared SiON/BNNTs sample has an average real permittivity between 1.52 and 1.55 and an average loss tangent value in the range of 0.0074-0.0266, at the frequency range of 26.5-40 GHz. The effect of thickness on the wave transparency of SiON/BNNTs samples is also discussed. To summarize the aforementioned superior characterization and measurement results, the presented SiON/BNNTs material system has a great potential to be used as EM transparent materials in harsh conditions.
随着电磁波电路器件的快速发展,具有各种功能的高性能波透明材料引起了广泛关注。陶瓷材料因其耐化学性和耐腐蚀性而成为有望应用于恶劣环境的候选材料。在这项工作中,采用聚合物衍生路线在室温下合成陶瓷复合材料。该复合材料由全氢聚硅氮烷衍生的SiON陶瓷制成,并由氮化硼纳米管(BNNTs)片材增强。添加SiON陶瓷材料后,所得样品表现出优异的疏水性,接触角为135 - 146.9°。更重要的是,对于制备的SiON/BNNTs样品,在含氧气氛中1600℃下观察到优异的热稳定性,且无任何形状变化。通过波导法研究了SiON/BNNTs的电磁透明度。在26.5 - 40 GHz频率范围内,制备的SiON/BNNTs样品的平均实介电常数在1.52至1.55之间,平均损耗正切值在0.0074 - 0.0266范围内。还讨论了厚度对SiON/BNNTs样品波透明度的影响。综上所述,上述优异的表征和测量结果表明,所提出的SiON/BNNTs材料体系在恶劣条件下作为电磁透明材料具有巨大潜力。