Hernández-Rodríguez Yazmin Mariela, Lopez-Salazar Primavera, Juarez-Diaz Gabriel, Paredes-Rubio Gabriel Romero, Peña-Sierra Ramón
Programa de Doctorado en Nanociencias y Nanotecnología, CINVESTAV-Instituto Politécnico Nacional, Av. IPN 2508, Mexico City 07360, Mexico.
Centro de Investigación en Dispositivos Semiconductores, Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla, Ciudad Universitaria, Puebla 72570, Mexico.
Materials (Basel). 2022 Aug 11;15(16):5509. doi: 10.3390/ma15165509.
A reliable process for the formation of nanoporous ZnO films supported on amorphous quartz and (100) silicon substrates via the processing of ZnO/Zn precursor films is reported. The process is based on the sublimation mechanism of Zn implemented in a novel ZnO/Zn precursor film to produce a nanoporous film. A scanning electron microscopy analysis of the nanoporous ZnO films' surfaces revealed the presence of ZnO nano-features with round tips; in contrast, the nanoporous ZnO films supported on (100) Si substrates showed hexagonal nut-like nanostructures. The crystallite size of the nanoporous ZnO films decreased as the sublimation temperature was increased. X-ray photoelectron spectroscopy studies demonstrated that formations of oxygen vacancies were produced during the processing stages (as the main structural lattice defects in the ZnO nanoporous films). The analysis of the photoluminescence response confirmed that the active deep-level centers were also related to the oxygen vacancies generated during the thermal processing of the ZnO/Zn precursor films. Finally, a qualitative mechanism is proposed to explain the formation of nanoporous ZnO films on quartz and crystalline Si substrates. The results suggest that the substrates used have a strong influence on the nanoporous ZnO structures obtained with the Zn-sublimation-controlled process.
报道了一种通过处理ZnO/Zn前驱体薄膜在非晶态石英和(100)硅衬底上形成纳米多孔ZnO薄膜的可靠工艺。该工艺基于在新型ZnO/Zn前驱体薄膜中实现的Zn升华机制来制备纳米多孔薄膜。对纳米多孔ZnO薄膜表面的扫描电子显微镜分析揭示了存在具有圆形尖端的ZnO纳米特征;相比之下,支撑在(100)Si衬底上的纳米多孔ZnO薄膜呈现出六边形螺母状纳米结构。随着升华温度的升高,纳米多孔ZnO薄膜的微晶尺寸减小。X射线光电子能谱研究表明,在处理阶段产生了氧空位(作为ZnO纳米多孔薄膜中的主要结构晶格缺陷)。光致发光响应分析证实,有源深能级中心也与ZnO/Zn前驱体薄膜热处理过程中产生的氧空位有关。最后,提出了一种定性机制来解释在石英和晶体Si衬底上纳米多孔ZnO薄膜的形成。结果表明,所用衬底对通过Zn升华控制工艺获得的纳米多孔ZnO结构有很大影响。