Cao Fei, Wang Ruosi, Zhang Peng, Wang Tongmin, Song Kexing
Shaanxi Province Key Laboratory for Electrical Materials and Infiltration Technology, School of Materials Science and Engineering, Xi'an University of Technology, Xi'an 710048, China.
School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China.
Materials (Basel). 2022 Aug 17;15(16):5647. doi: 10.3390/ma15165647.
Synchrotron radiation dynamic imaging technology combined with the static characterization method was used to study the microstructural evolution and the growth kinetics of intermetallic compounds (IMCs) at the liquid Al/solid Cu interface. The results show that the interfacial microstructure can be divided into layered solid diffusion microstructures (AlCu, AlCu, AlCu and AlCu) and solidification microstructures (AlCu, AlCu and AlCu) from the Cu side to the Al side. Meanwhile, the growth of bubbles formed during the melting, holding and solidification of an Al/Cu sample was also discussed, which can be divided into three modes: diffusion, coalescence and engulfment. Moreover, the growth of AlCu and (AlCu + AlCu) near the Cu side is all controlled by both interfacial reaction and volume diffusion. The growth of AlCu adjacent to the melt is mainly controlled by the interfacial reaction, which plays a major role in the growth of the total IMCs.
采用同步辐射动态成像技术结合静态表征方法，研究了液态Al/固态Cu界面金属间化合物（IMCs）的微观结构演变及生长动力学。结果表明，从Cu侧到Al侧，界面微观结构可分为层状固态扩散微观结构（AlCu、AlCu、AlCu和AlCu）和凝固微观结构（AlCu、AlCu和AlCu）。同时，还讨论了Al/Cu样品在熔化、保温和凝固过程中形成气泡的生长情况，其可分为三种模式：扩散、合并和吞没。此外，Cu侧附近AlCu和（AlCu + AlCu）的生长均受界面反应和体积扩散控制。熔体附近AlCu的生长主要受界面反应控制，界面反应在总IMCs的生长中起主要作用。
