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铜衬底上铟固态界面反应的长期老化研究

Long-Term Aging Study on the Solid State Interfacial Reactions of In on Cu Substrate.

作者信息

Hung Han-Tang, Chang Fu-Ling, Tsai Chin-Hao, Liao Chia-Yi, Kao C R

机构信息

Department of Materials Science & Engineering, National Taiwan University, Taipei 10617, Taiwan.

出版信息

Materials (Basel). 2023 Sep 18;16(18):6263. doi: 10.3390/ma16186263.

DOI:10.3390/ma16186263
PMID:37763541
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10532517/
Abstract

Indium is considered a candidate low-temperature solder because of its low melting temperature and excellent mechanical properties. However, the solid-state microstructure evolution of In with different substrates has rarely been studied due to the softness of In. To overcome this difficulty, cryogenic broad Ar beam ion polishing was used to produce an artifact-free Cu/In interface for observation. In this study, we accomplished phase identification and microstructure investigation at the Cu/In interface after long-term thermal aging. CuIn was observed to grow at the Cu/In interface and proved to be a stable phase in the Cu-In binary system. The peritectoid temperature of the CuIn + In → CuIn reaction was confirmed to be between 100 and 120 °C. In addition, the growth rate of CuIn was discovered to be dominated by the curvature of the reactant CuIn/In phase and the temperature difference with the peritectoid temperature. Finally, a comprehensive microstructural evolution mechanism of the Cu/In solid-state interfacial reaction was proposed.

摘要

铟因其低熔点温度和优异的机械性能而被认为是一种低温焊料候选材料。然而,由于铟的柔软性,不同衬底上铟的固态微观结构演变很少被研究。为了克服这一困难,采用低温宽幅氩束离子抛光技术制备了无假象的铜/铟界面用于观察。在本研究中,我们完成了长期热老化后铜/铟界面的相鉴定和微观结构研究。观察到CuIn在铜/铟界面处生长,并被证明是铜-铟二元体系中的一个稳定相。CuIn + In → CuIn反应的包析温度被确定在100至120℃之间。此外,发现CuIn的生长速率受反应物CuIn/In相的曲率和与包析温度的温差支配。最后,提出了铜/铟固态界面反应的综合微观结构演变机制。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8b5a/10532517/45954c79b381/materials-16-06263-g011.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8b5a/10532517/56a64d5ad27e/materials-16-06263-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8b5a/10532517/bb20e471eab8/materials-16-06263-g007.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8b5a/10532517/0c4bdd7a89ed/materials-16-06263-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8b5a/10532517/00c1c0d24ef9/materials-16-06263-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8b5a/10532517/45954c79b381/materials-16-06263-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8b5a/10532517/d0d2f5597e8d/materials-16-06263-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8b5a/10532517/356401d7d847/materials-16-06263-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8b5a/10532517/a8de0f8ca402/materials-16-06263-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8b5a/10532517/30e24148ba41/materials-16-06263-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8b5a/10532517/478cd62d1b17/materials-16-06263-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8b5a/10532517/56a64d5ad27e/materials-16-06263-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8b5a/10532517/bb20e471eab8/materials-16-06263-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8b5a/10532517/317df339115d/materials-16-06263-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8b5a/10532517/0c4bdd7a89ed/materials-16-06263-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8b5a/10532517/00c1c0d24ef9/materials-16-06263-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8b5a/10532517/45954c79b381/materials-16-06263-g011.jpg

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本文引用的文献

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Compound formation at Cu-In thin-film interfaces detected by perturbed gamma - gamma angular correlations.通过扰动伽马-伽马角关联检测铜铟薄膜界面处的化合物形成。
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Characterization of phases and determination of phase relations in the Cu-In-S system by gamma - gamma perturbed angular correlations.通过γ-γ扰动角关联对Cu-In-S体系中的相进行表征及相关系的确定。
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