Jantayod Aek
Department of Physics, Faculty of Science, Naresuan University, Phitsanulok 65000, Thailand.
Research Center for Academics in Applied Physics, Faculty of Science, Naresuan University, Phitsanulok 65000, Thailand.
Micromachines (Basel). 2022 Aug 18;13(8):1340. doi: 10.3390/mi13081340.
A ferromagnetic/insulator/ferromagnetic Rashba metal junction (FM/I/FRM) with both Rashba spin-orbit coupling (RSOC) and exchange energy splitting was studied theoretically. Two kinds of interactions in FRM generate the three metallic states in a FRM; the Rashba ring metal (RRM) state, the anomalous Rashba metal (ARM) state and the normal Rashba metal (NRM) state. The scattering method and the free-electron model are used to describe the transport properties of particles and to calculate the conductance spectrum and the spin polarization of current in the junction. The conductance spectrum in the applied voltage shows the prominent features at the boundaries not only for the three states of the FRM but also in the ARM state. In addition, the conductance in the RRM and ARM states is strongly influenced by both the thickness and barrier height of the insulator layer. We also found that the spin polarization obtains a high value in the ARM state and is not affected by the qualities of the insulator, unlike the RRM and NRM states. Obtaining high-spin polarization from FRM material can be useful to produce spintronic devices in future devices.
从理论上研究了一种同时具有 Rashba 自旋轨道耦合（RSOC）和交换能分裂的铁磁/绝缘体/铁磁 Rashba 金属结（FM/I/FRM）。FRM 中的两种相互作用产生了 FRM 中的三种金属态：Rashba 环金属（RRM）态、反常 Rashba 金属（ARM）态和正常 Rashba 金属（NRM）态。采用散射方法和自由电子模型来描述粒子的输运性质，并计算结中电流的电导谱和自旋极化。施加电压时的电导谱不仅在 FRM 的三种状态的边界处，而且在 ARM 态中都显示出显著特征。此外，RRM 和 ARM 态中的电导受到绝缘层厚度和势垒高度的强烈影响。我们还发现，与 RRM 和 NRM 态不同，ARM 态中的自旋极化获得了高值，并且不受绝缘体质量的影响。从 FRM 材料中获得高自旋极化对于未来器件中自旋电子器件的制造可能是有用的。
