Avila Lindiomar B, Serrano Arambulo Pablo C, Dantas Adriana, Cuevas-Arizaca Edy E, Kumar Dinesh, Müller Christian K
Departamento de Física, Universidade Federal de Santa Catarina, Florianópolis 88040-900, Santa Catarina, Brazil.
Department of Chemical and Food Engineering, Federal University of Santa Catarina, Florianopolis 88040-900, Santa Catarina, Brazil.
Nanomaterials (Basel). 2022 Aug 22;12(16):2881. doi: 10.3390/nano12162881.
The electrical conduction mechanism of resistive switching Prussian white (PW) thin films obtained by the electrodeposition method was examined by AC impedance spectroscopy and DC current-voltage measurements. Using an electrode tip to contact PW grown over Au, robust unipolar resistive switching was observed with a current change of up to three orders of magnitude, high repeatability, and reproducibility. Moreover, electrical impedance spectroscopy showed that the resistive switching comes from small conductive filaments formed by potassium ions before the establishment of larger conductive channels. Both voltammetry and EIS measurements suggest that the electrical properties and conductive filament formation are influenced by defects and ions present in the grain boundaries. Thus, PW is a potential material for the next generation of ReRAM devices.
通过交流阻抗谱和直流电流-电压测量研究了采用电沉积法制备的电阻开关普鲁士白(PW)薄膜的导电机制。使用电极尖端接触生长在金上的PW,观察到了稳健的单极电阻开关,电流变化高达三个数量级,具有高重复性和再现性。此外,电阻抗谱表明,电阻开关源于在较大导电通道形成之前由钾离子形成的小导电细丝。伏安法和电化学阻抗谱测量均表明,电学性质和导电细丝的形成受晶界中存在的缺陷和离子的影响。因此,PW是下一代电阻式随机存取存储器(ReRAM)器件的潜在材料。