Seong Inho, Kim Sijun, Lee Youngseok, Cho Chulhee, Lee Jangjae, Jeong Wonnyoung, You Yebin, You Shinjae
Applied Physics Lab for PLasma Engineering (APPLE), Department of Physics, Chungnam National University, Daejeon 34134, Korea.
Samsung Electronics, Hwaseong-si 18448, Korea.
Sensors (Basel). 2022 Aug 20;22(16):6254. doi: 10.3390/s22166254.
As the importance of ion-assisted surface processing based on low-temperature plasma increases, the monitoring of ion energy impinging into wafer surfaces becomes important. Monitoring methods that are noninvasive, real-time, and comprise ion collision in the sheath have received much research attention. However, in spite of this fact, most research was performed in invasive, not real-time, and collisionless ion sheath conditions. In this paper, we develop a noninvasive real-time IED monitoring system based on an ion trajectory simulation where the Monte Carlo collision method and an electrical model are adopted to describe collisions in sheaths. We technically, theoretically, and experimentally investigate the IED measurement with the proposed method, and compared it with the result of IEDs measured via a quadrupole mass spectrometer under various conditions. The comparison results show that there was no major change in the IEDs as radio-frequency power increased or the IED gradually became broad as gas pressure increased, which was in a good agreement with the results of the mass spectrometer.
随着基于低温等离子体的离子辅助表面处理的重要性日益增加，监测入射到晶圆表面的离子能量变得至关重要。非侵入式、实时且包含鞘层中离子碰撞的监测方法受到了广泛的研究关注。然而，尽管如此，大多数研究是在侵入式、非实时且无碰撞离子鞘层条件下进行的。在本文中，我们基于离子轨迹模拟开发了一种非侵入式实时离子能量分布（IED）监测系统，其中采用蒙特卡罗碰撞方法和电学模型来描述鞘层中的碰撞。我们从技术、理论和实验上研究了用所提出的方法进行的IED测量，并将其与在各种条件下通过四极质谱仪测量的IED结果进行了比较。比较结果表明，随着射频功率增加，IED没有重大变化；随着气压增加，IED逐渐变宽，这与质谱仪的结果高度吻合。
