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磁控溅射制备含PbCl钙钛矿薄膜用于提高太阳能电池效率的掺杂机制

Doping Mechanism of Perovskite Films with PbCl Prepared by Magnetron Sputtering for Enhanced Efficiency of Solar Cells.

作者信息

Gao Bo, Hu Jing, Zuo Zhuang, Qi Qi, Peng Zongyang, Chen Hunglin, Yan Kai, Hou Shaocong, Zou Dechun

机构信息

Beijing National Laboratory for Molecular Sciences, Key Laboratory of Polymer Chemistry and Physics of Ministry of Education Center for Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.

School of Electrical Engineering and Automation, Wuhan University, Wuhan 430072, China.

出版信息

ACS Appl Mater Interfaces. 2022 Sep 7;14(35):40062-40071. doi: 10.1021/acsami.2c11929. Epub 2022 Aug 26.

Abstract

The last decade has witnessed a rapid growth of perovskite solar cells extended from mesoporous to planar architecture as well as from solution processing to solvent-free fabrication. The preparation of perovskite films by solvent-free method still presents significant challenges, such as the difficulty of film preparation by multiple evaporation sources in vapor deposition and the immaturity of the sputtered method. Here, we present a planar perovskite solar cell fabricated by solvent-free magnetron sputtering without the assistance of the mesoporous TiO layer, and lead chloride (PbCl) was mechanically milled into the target of methylammonium lead halides (MAPbI) to improve the quality of perovskite film by regulating the crystallization process with the Cl element. Furthermore, the internal reason for the effect of different PbCl doping contents on the trap density of perovskite films was also investigated in detail. These lead to an improved power conversion efficiency of planar heterojunction perovskite solar cells up to 17.10%, which is the highest efficiency recorded for the sputtered perovskite solar cells so far. The stability of resulting solar cells has also been significantly improved by exploring the doping mechanism of perovskite films with PbCl in detail, showing great research and application prospect.

摘要

在过去十年中,钙钛矿太阳能电池发展迅速,从介孔结构扩展到平面结构,制备方法也从溶液处理发展到无溶剂制造。通过无溶剂方法制备钙钛矿薄膜仍然面临重大挑战,例如气相沉积中多蒸发源制备薄膜的困难以及溅射方法的不成熟。在此,我们展示了一种通过无溶剂磁控溅射制备的平面钙钛矿太阳能电池,无需介孔TiO层的辅助,并且将氯化铅(PbCl)机械研磨到甲基铵卤化铅(MAPbI)靶材中,通过Cl元素调节结晶过程来提高钙钛矿薄膜的质量。此外,还详细研究了不同PbCl掺杂含量对钙钛矿薄膜陷阱密度影响的内在原因。这些使得平面异质结钙钛矿太阳能电池的功率转换效率提高到17.10%,这是迄今为止溅射钙钛矿太阳能电池记录的最高效率。通过详细探索PbCl对钙钛矿薄膜的掺杂机制,所得太阳能电池的稳定性也得到了显著提高,展现出巨大的研究和应用前景。

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