Gao Qianqian, Yuan Shengjie, Zhou Zhengji, Kou Dongxing, Zhou Wenhui, Meng Yuena, Qi Yafang, Han Litao, Wu Sixin
Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng, 475004, China.
Small. 2022 Sep;18(39):e2203443. doi: 10.1002/smll.202203443. Epub 2022 Aug 26.
Solution processing of Cu(In,Ga)Se (CIGS) absorber is a highly promising strategy for a cost-effective CIGS photovoltaic device. However, the device performance of solution-processed CIGS solar cells is still hindered by the severe non-radiative recombination resulting from deep defects and poor crystal quality. Here, a simple and effective precursor film engineering strategy is reported, where Cu-rich (CGI >1) CIGS layer is incorporated into the bottom of the CIGS precursor film. It has been discovered that the incorporation of the Cu-rich CIGS layer greatly improves the absorber crystallinity and reduces the trap state density. Accordingly, more efficient charge generation and charge transfer are realized. As a result of systematic processing optimization, the champion solution-processed CIGS device delivers an improved open-circuit voltage of 656 mV, current density of 33.15 mA cm , and fill factor of 73.78%, leading to the high efficiency of 16.05%.
铜铟镓硒（CIGS）吸收层的溶液处理工艺是实现具有成本效益的CIGS光伏器件的极具前景的策略。然而，溶液处理的CIGS太阳能电池的器件性能仍受到由深度缺陷和较差晶体质量导致的严重非辐射复合的阻碍。在此，报道了一种简单有效的前驱体薄膜工程策略，即将富铜（CGI>1）的CIGS层并入CIGS前驱体薄膜的底部。已发现并入富铜CIGS层极大地提高了吸收层的结晶度并降低了陷阱态密度。相应地，实现了更高效的电荷产生和电荷转移。经过系统的工艺优化，最优的溶液处理CIGS器件的开路电压提高到656 mV，电流密度为33.15 mA cm ，填充因子为73.78%，从而实现了16.05%的高效率。
