Zhao Yunhai, Yuan Shengjie, Kou Dongxing, Zhou Zhengji, Wang Xinshou, Xiao Haiqin, Deng Yueqing, Cui Changcheng, Chang Qianqian, Wu Sixin
Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China.
ACS Appl Mater Interfaces. 2020 Mar 18;12(11):12717-12726. doi: 10.1021/acsami.9b21354. Epub 2020 Mar 5.
Cu(In,Ga)Se (CIGS) is considered a promising photovoltaics material due to its excellent properties and high efficiency. However, the complicated deep defects (such as In or Ga) in the CIGS layer hamper the development of polycrystalline CIGS solar cells. Numerous efforts have been employed to passivate these defects which distributed in the grain boundary and the CIGS/CdS interface. In this work, we implemented an effective Ag substituting approach to passivate bulk defects in CIGS absorber. The composition and phase characterizations revealed that Ag was successfully incorporated in the CIGS lattice. The substituting of Ag could boost the crystallization without obviously changing the band gap. The C-V and EIS results demonstrated that the device showed enlarged W and beneficial carrier transport dynamics after Ag incorporation. The DLTS result revealed that the deep In defect density was dramatically decreased after Ag substituting for Cu. A champion Ag-substituted CIGS device exhibited a remarkable efficiency of 15.82%, with improved of 630 mV, of 34.44 mA/cm, and FF of 72.90%. Comparing with the efficiency of an unsubstituted CIGS device (12.18%), a Ag-substituted CIGS device exhibited 30% enhancement.
铜铟镓硒（CIGS）因其优异的性能和高效率而被认为是一种很有前途的光伏材料。然而，CIGS层中复杂的深缺陷（如铟或镓）阻碍了多晶CIGS太阳能电池的发展。人们已经采取了许多措施来钝化这些分布在晶界和CIGS/CdS界面的缺陷。在这项工作中，我们实施了一种有效的银替代方法来钝化CIGS吸收体中的体缺陷。成分和相表征表明，银成功地掺入了CIGS晶格中。银的替代可以促进结晶，而不会明显改变带隙。C-V和EIS结果表明，掺入银后，器件的W增大，载流子输运动力学有利。DLTS结果表明，用银替代铜后，深铟缺陷密度显著降低。一个经过银替代的CIGS冠军器件表现出15.82%的显著效率，开路电压提高了630 mV，短路电流密度为34.44 mA/cm²，填充因子为72.90%。与未替代的CIGS器件效率（12.18%）相比，经过银替代的CIGS器件提高了30%。
