De Vita Alessandro, Nguyen Thao Thi Phuong, Sant Roberto, Pierantozzi Gian Marco, Amoroso Danila, Bigi Chiara, Polewczyk Vincent, Vinai Giovanni, Nguyen Loi T, Kong Tai, Fujii Jun, Vobornik Ivana, Brookes Nicholas B, Rossi Giorgio, Cava Robert J, Mazzola Federico, Yamauchi Kunihiko, Picozzi Silvia, Panaccione Giancarlo
Laboratorio TASC, in Area Science Park, Istituto Officina dei Materiali (IOM)-CNR, S.S.14, Km 163.5, I-34149 Trieste, Italy.
Dipartimento di Fisica, Università di Milano, Via Celoria 16, I-20133 Milano, Italy.
Nano Lett. 2022 Sep 14;22(17):7034-7041. doi: 10.1021/acs.nanolett.2c01922. Epub 2022 Aug 30.
Two-dimensional van der Waals magnetic semiconductors display emergent chemical and physical properties and hold promise for novel optical, electronic and magnetic "few-layers" functionalities. Transition-metal iodides such as CrI and VI are relevant for future electronic and spintronic applications; however, detailed experimental information on their ground state electronic properties is lacking often due to their challenging chemical environment. By combining X-ray electron spectroscopies and first-principles calculations, we report a complete determination of CrI and VI electronic ground states. We show that the transition metal-induced orbital filling drives the stabilization of distinct electronic phases: a wide bandgap in CrI and a Mott insulating state in VI. Comparison of surface-sensitive (angular-resolved photoemission spectroscopy) and bulk-sensitive (X-ray absorption spectroscopy) measurements in VI reveals a surface-only V oxidation state, suggesting that ground state electronic properties are strongly influenced by dimensionality effects. Our results have direct implications in band engineering and layer-dependent properties of two-dimensional systems.
二维范德华磁半导体展现出新兴的化学和物理性质,并有望实现新型光学、电子和磁性“少层”功能。诸如CrI和VI之类的过渡金属碘化物与未来的电子和自旋电子学应用相关;然而,由于其具有挑战性的化学环境,常常缺乏关于其基态电子性质的详细实验信息。通过结合X射线电子能谱和第一性原理计算,我们报告了对CrI和VI电子基态的完整测定。我们表明,过渡金属诱导的轨道填充驱动了不同电子相的稳定:CrI中的宽带隙和VI中的莫特绝缘态。对VI中表面敏感(角分辨光电子能谱)和体敏感(X射线吸收光谱)测量的比较揭示了仅表面的V氧化态,这表明基态电子性质受到维度效应的强烈影响。我们的结果对二维系统的能带工程和层依赖性质具有直接影响。