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通过晶粒抑制和介电峰扁平化工程同时提高(NaBi)SrTiO-La(TaNb)O无铅储能陶瓷的能量密度和放电效率

Simultaneously enhanced energy density and discharge efficiency of (NaBi)SrTiO-La(TaNb)O lead-free energy storage ceramics grain inhibition and dielectric peak flattening engineering.

作者信息

Wang Yuesha, Chen Yanhong, Zhao Daen, Wang Hua, Zheng Qiaoji, Fan Guifen, He Xuemei, Lin Dunmin

机构信息

College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China.

School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.

出版信息

Dalton Trans. 2022 Sep 20;51(36):13867-13877. doi: 10.1039/d2dt02146c.

Abstract

Energy storage ceramics are widely favored for their rapid charging/discharging speed, good temperature stability and large power density. Nevertheless, most lead-free energy storage ceramics can achieve excellent energy storage density () only under extremely high breakdown electric field and usually possess inferior efficiency (). In this research, neoteric (1 - )(NaBi)SrTiO-La(TaNb)O (NBST-LTN) ceramics were designed by grain inhibition and dielectric peak flattening engineering to enhance and simultaneously under a low electric field (≤150 kV cm). In particular, in one aspect, multiple co-doping of the elements La, Ta and Nb as excellent grain growth inhibitors reduces the concentration of oxygen vacancies and refines the grain size to increase the breakdown strength. In another aspect, partial ion substitution in the A/B sites of BNST ceramics breaks the ferroelectric long-range order to generate polar nanoregions, resulting in a remarkable decrease in remanent polarization. Moreover, the incorporation of LTN distorts the lattice, causing a shift towards room temperature and flattening of dielectric peaks to promote the temperature/frequency stabilities significantly. Ultimately, the ultrahigh of 92.49%, promising of 2.09 J cm and large of 1.94 J cm under 148 kV cm are achieved concurrently accompanied by the optimistic temperature, frequency and cyclic stabilities in the BNST-0.025LTN ceramic. Besides, outstanding power and current densities ( and ) of 67.86 MW cm and 848.29 A cm are procured in the BNST-0.025LTZ ceramic under a low electric field of 160 kV cm. The present strategies of grain inhibition and dielectric peak flattening engineering provide an effective approach to exploit novel lead-free ceramics with excellent energy storage properties.

摘要

储能陶瓷因其快速充放电速度、良好的温度稳定性和大功率密度而受到广泛青睐。然而,大多数无铅储能陶瓷仅在极高的击穿电场下才能实现优异的储能密度(),并且通常具有较低的效率()。在本研究中,通过晶粒抑制和介电峰扁平化工程设计了新型的(1 - )(NaBi)SrTiO-La(TaNb)O(NBST-LTN)陶瓷,以在低电场(≤150 kV cm)下同时提高和。特别是,一方面,作为优异晶粒生长抑制剂的La、Ta和Nb元素的多重共掺杂降低了氧空位浓度并细化了晶粒尺寸,从而提高了击穿强度。另一方面,BNST陶瓷A/B位点的部分离子取代打破了铁电长程序,产生了极性纳米区域,导致剩余极化显著降低。此外,LTN的掺入使晶格发生畸变,导致向室温移动并使介电峰扁平化,从而显著提高了温度/频率稳定性。最终,在BNST-0.025LTN陶瓷中,在148 kV cm下同时实现了92.49%的超高、2.09 J cm的有望储能密度和1.94 J cm的大储能密度,同时伴随着令人乐观的温度、频率和循环稳定性。此外,在160 kV cm的低电场下,BNST-0.025LTZ陶瓷获得了67.86 MW cm和848.29 A cm的出色功率和电流密度(和)。目前的晶粒抑制和介电峰扁平化工程策略为开发具有优异储能性能的新型无铅陶瓷提供了一种有效方法。

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