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通过超级电容器结构对FeO中磁性进行电化学和静电掺杂调制的比较研究。

A comparative study of electrochemical and electrostatic doping modulation of magnetism in FeOvia ultracapacitor structure.

作者信息

Gu Fangchao, Zhang Leqing, Li Zhaohui, Zhang Jie, Pan Yuanyuan, Li Qinghao, Li Hongsen, Qin Yufeng, Li Qiang

机构信息

College of Physics, University-Industry Joint Center for Ocean Observation and Broadband Communication, Qingdao University, Qingdao 266071, People's Republic of China.

College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, People's Republic of China.

出版信息

J Phys Condens Matter. 2022 Sep 16;34(45). doi: 10.1088/1361-648X/ac8e47.

DOI:10.1088/1361-648X/ac8e47
PMID:36044895
Abstract

Electric field control of magnetism can boost energy efficiency and have brought revolutionary breakthroughs in the development of widespread applications in spintronics. Electrolyte gating plays an important role in magnetism modulation. In this work, reversible room-temperature electric field control of saturation magnetization in FeOvia a supercapacitor structure is demonstrated with three types of traditional gate electrolytes for comparison. Different magnetization response and responsible mechanisms are revealed by Operando magnetometry PPMS/VSM and XPS characterization. The main mechanism in NaSO, KOH aqueous electrolytes is electrochemical effect, while both electrochemical and electrostatic effects were found in LiPForganic electrolyte. This work offers a kind of reference basis for selecting appropriate electrolyte in magnetism modulation by electrolyte-gating in the future, meanwhile, paves its way towards practical use in magneto-electric actuation, voltage-assisted magnetic storage, facilitating the development of high-performance spintronic devices.

摘要

磁场的电场控制可以提高能源效率,并在自旋电子学广泛应用的发展中带来了革命性突破。电解质门控在磁性调制中起着重要作用。在这项工作中,通过超级电容器结构展示了在室温下对FeO中饱和磁化强度的可逆电场控制,并使用三种传统的栅极电解质进行比较。通过操作磁强计PPMS/VSM和XPS表征揭示了不同的磁化响应和相关机制。在NaSO、KOH水性电解质中的主要机制是电化学效应,而在LiPF有机电解质中发现了电化学和静电效应。这项工作为未来在电解质门控的磁性调制中选择合适的电解质提供了一种参考依据,同时为磁电驱动、电压辅助磁存储的实际应用铺平了道路,促进了高性能自旋电子器件的发展。

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