异质集成的铌酸锂基III-V族宽带光源和光电探测器。

Heterogeneously integrated III-V-on-lithium niobate broadband light sources and photodetectors.

作者信息

Zhang Xian, Liu Xiaoyue, Ma Rui, Chen Zichao, Yang Zhuohui, Han Ya, Wang Bing, Yu Siyuan, Wang Ruijun, Cai Xinlun

出版信息

Opt Lett. 2022 Sep 1;47(17):4564-4567. doi: 10.1364/OL.468008.

Abstract

Heterogeneous integration of III-V active devices on lithium niobate-on-insulator (LNOI) photonic circuits enable fully integrated transceivers. Here we present the co-integration of InP-based light-emitting diodes (LEDs) and photodetectors on an LNOI photonics platform. Both devices are realized based on the same III-V epitaxial layers stack adhesively bonded on an LNOI waveguide circuit. The light is evanescently coupled between the LNOI and III-V waveguide via a multiple-section adiabatic taper. The waveguide-coupled LEDs have a 3-dB bandwidth of 40 nm. The photodetector features a responsivity of 0.38 A/W in the 1550-nm wavelength range and a dark current of 9 nA at -0.5 V at room temperature.

摘要

将III-V族有源器件异质集成到绝缘体上铌酸锂（LNOI）光子电路上可实现全集成收发器。在此，我们展示了基于InP的发光二极管（LED）和光电探测器在LNOI光子平台上的共集成。这两种器件均基于粘结在LNOI波导电路上的同一III-V族外延层堆叠实现。光通过多段绝热锥形结构在LNOI和III-V族波导之间进行倏逝耦合。波导耦合LED的3 dB带宽为40 nm。该光电探测器在1550 nm波长范围内的响应度为0.38 A/W，室温下在-0.5 V时的暗电流为9 nA。