Shaikh Gulistan Y, Nilegave Dhanaraj S, Girawale Swapnil S, Kore Kiran B, Newaskar Shivkumar R, Sahu Shrishreshtha A, Funde Adinath M
Centre for Energy Studies (formerly School of Energy Studies), Savitribai Phule Pune University, Pune 411007, India.
Department of Physics, Savitribai Phule Pune University, Pune 411007, India.
ACS Omega. 2022 Aug 16;7(34):30233-30240. doi: 10.1021/acsomega.2c03352. eCollection 2022 Aug 30.
We report a facile synthesis of CuS and CdS nanoparticles using a cheap solution-processed chemical bath method forming heterogeneous nucleation. The optical, structural, photoelectrochemical (PEC), and electronic properties are studied by implementing relevant experimental techniques. The estimated optical band gap of ∼2.10 eV of CuS designates potential application in inexpensive photocatalysis and solar cells. Further, the valence band and conduction band positions of CuS and CdS are evaluated using cyclic voltammetry curves. Narrow conduction and valence band offset potentials measured at the CuS/CdS heterojunction are encouraging factors for the PEC application. The electronic properties are supported by the current density vs potential plots (-) with an improved short-circuit current density of 0.71 mA cm for the heterojunction compared to bare CuS showing 0.15 μA cm. The determined PCE of the heterojunction CuS/CdS is 0.65%.
我们报道了一种使用廉价的溶液处理化学浴法合成硫化铜（CuS）和硫化镉（CdS）纳米颗粒的简便方法，该方法形成异质形核。通过实施相关实验技术研究了其光学、结构、光电化学（PEC）和电子性质。估计硫化铜约2.10电子伏特的光学带隙表明其在廉价光催化和太阳能电池中的潜在应用。此外，利用循环伏安曲线评估了硫化铜和硫化镉的价带和导带位置。在硫化铜/硫化镉异质结处测得的窄导带和价带偏移电位是光电化学应用的有利因素。电子性质由电流密度与电位图（-）支持，与显示0.15微安/平方厘米的裸硫化铜相比，异质结的短路电流密度提高到0.71毫安/平方厘米。确定的硫化铜/硫化镉异质结的光电转换效率（PCE）为0.65%。
