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斯皮尔斯纪念讲座:用于薄膜太阳能电池的下一代硫属化物基吸收体。

Spiers Memorial Lecture: Next generation chalcogenide-based absorbers for thin-film solar cells.

机构信息

Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708, USA.

Department of Chemistry, Duke University, Durham, North Carolina 27708, USA.

出版信息

Faraday Discuss. 2022 Oct 28;239(0):9-37. doi: 10.1039/d2fd00132b.

DOI:10.1039/d2fd00132b
PMID:36065897
Abstract

Inorganic-based thin-film photovoltaics (TFPV) represents an important component of the growing low-carbon energy market and plays a vital role in the drive toward lower cost and increased penetration of solar energy. Yet, commercialized thin-film absorber technologies suffer from some non-ideal characteristics, such as toxic or non-abundant element use (, CdTe and Cu(In,Ga)(S,Se), which bring into question their suitability for terawatt deployment. Numerous promising chalcogenide, halide, pnictide and oxide semiconductors are being pursued to bridge these concerns for TFPV and several promising paths have emerged, both as prospective replacements for the entrenched technologies, and to serve as partner (, higher bandgap) absorbers for tandem junction devices-, to be used with a lower bandgap Si bottom cell. The current perspective will primarily focus on emerging chalcogenide-based technologies and provide both an overview of absorber candidates that have been of recent interest and a deeper dive into an exemplary CuBaSnS-related family. Overall, considering the combined needs of high-performance, low-cost, and operational stability, as well as the experiences gained from existing commercialized thin-film absorber technologies, chalcogenide-based semiconductors represent a promising direction for future PV development and also serve to highlight common themes and needs among the broader TFPV materials family.

摘要

基于无机的薄膜光伏(TFPV)是不断增长的低碳能源市场的重要组成部分,在降低太阳能成本和提高渗透率方面发挥着至关重要的作用。然而,商业化的薄膜吸收体技术存在一些不理想的特性,例如使用有毒或不丰富的元素(CdTe 和 Cu(In,Ga)(S,Se)),这使得它们是否适合大规模部署受到质疑。为了解决 TFPV 的这些问题,人们正在研究许多有前途的硫属化物、卤化物、磷化物和氧化物半导体,这些半导体既可以作为现有技术的替代品,也可以作为串联结器件的(高带隙)吸收体的合作伙伴,与较低带隙的 Si 底电池一起使用。目前的观点将主要集中在新兴的硫属化物基技术上,并提供了近期备受关注的吸收体候选物的概述,以及对具有代表性的 CuBaSnS 相关家族的深入探讨。总的来说,考虑到高性能、低成本和运行稳定性的综合需求,以及从现有的商业化薄膜吸收体技术中获得的经验,基于硫属化物的半导体代表了未来光伏发展的一个有前途的方向,同时也突出了更广泛的 TFPV 材料家族的共同主题和需求。

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